Effects of short-term DC-bias-induced stress on n-GaN/AlGaN/GaN MOSHEMTs with liquid-phase-deposited Al2O3 as a gate dielectric

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 2978-2987

  Basu, Sarbani ^a   Singh, Pramod K ^a   Lin, Shun Kuan ^a   Sze, Po Wen ^b   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

Author keywords

Al2O3; AlGaN GaN; dc bias stress; liquid phase deposition (LPD); metaloxidesemiconductor high electron mobility transistor (MOSHEMT)

Indexed keywords

AL2O3; ALGAN/GAN; BARRIER LAYERS; BIAS STRESS; COMPARATIVE STUDIES; CURRENT COLLAPSE; DC BIAS; DC CHARACTERISTICS; DC-BIAS STRESS; DEVICE DEGRADATION; GATE STRESS; HIGH DRAIN VOLTAGE; INDUCED STRESS; LIQUID PHASE; LIQUID-PHASE DEPOSITION; LIQUID-PHASE DEPOSITION (LPD); LOW TEMPERATURES; MOSHEMT; OXIDE THIN FILMS; PASSIVATION EFFECT; PASSIVATION LAYER; SURFACE PASSIVATION; SURFACE STATE;

ALUMINUM; DEGRADATION; DEPOSITION; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; ELECTRONS; FILM PREPARATION; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); LIQUIDS; PASSIVATION; THIN FILMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77958547051     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2071130     Document Type: Article

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