Reliability issues of Gallium Nitride High Electron Mobility Transistors

International Journal of Microwave and Wireless Technologies

Volumn 2, Issue 1, 2010, Pages 39-50

  Meneghesso, Gaudenzio ^a   Meneghini, Matteo ^a   Tazzoli, Augusto ^a   Ronchi, Nicolo' ^a   Stocco, Antonio ^a   Chini, Alessandro ^b   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Damage; Electroluminescence; GaN HEMT Reliability; Hot electrons; Trapping

Indexed keywords

ACCELERATED LIFE TESTS; ACCELERATED TESTING; ALGAN/GAN; ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE; ANALYSIS OF FAILURE MODES; DEGRADATION FACTOR; DEVICE SIMULATIONS; ELECTRICAL CHARACTERISTIC; FAILURE MECHANISM; GAN HEMT RELIABILITY; GAN HEMTS; HIGH ELECTRIC FIELDS; MARKET PENETRATION; MEAN TIME TO FAILURE; MILLIMETER MICROWAVES; PULSED MEASUREMENTS; REVERSE BIAS; RF STRESS;

ALUMINUM GALLIUM NITRIDE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; ELECTRIC FIELDS; ELECTROLUMINESCENCE; ELECTRON MOBILITY; ELECTRONS; FAILURE ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; HOT ELECTRONS; MICROWAVE INTEGRATED CIRCUITS; QUALITY ASSURANCE; TESTING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78651531396     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S1759078710000097     Document Type: Article

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