High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1057-1061

  Yagi, S ^a   Shimizu, M ^a   Inada, M ^a   Yamamoto, Y ^a   Piao, G ^a   Okumura, H ^a   Yano, Y ^b   Akutsu, N ^b   Ohashi, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

AlGaN GaN; Breakdown voltage; HEMT; MIS structure; SiN; TiO2

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; GATES (TRANSISTOR); MISFET DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON NITRIDE; THRESHOLD VOLTAGE; TITANIUM OXIDES;

ALGAN/GAN; METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURE; SIN; TIO2;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33745754028     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.041     Document Type: Article

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