Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors

Journal of Applied Physics

Volumn 87, Issue 8, 2000, Pages 3900-3904

  Antoszewski, J ^a   Gracey, M ^a   Dell, J M ^a   Faraone, L ^a   Fisher, T A ^a   Parish, G ^b   Wu, Y F ^b   Mishra, U K ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000191960     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372432     Document Type: Article

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