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Volumn 86, Issue 14, 2005, Pages 1-3

Gate current leakage and breakdown mechanism in unpassivated AlGaNGaN high electron mobility transistors by post-gate annealing

(4) Kim, Hyeongnam a Lee, Jaesun a Liu, Dongmin a Lu, Wu a

a Ohio State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM COMPOUNDS; ANNEALING; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; PASSIVATION;

BREAKDOWN MECHANISM; HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); POST-GATE ANNEALING; SHALLOW TRAPS;

TRANSISTORS;

EID: 17444389230 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1899255 Document Type: Article

Times cited : (86)

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