A simple gate-dielectric fabrication process for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 997-999

  Liu, Han Yin ^a   Chou, Bo Yi ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Ho, Chiu Sheng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN; gate dielectric; H 2O 2 oxidation; metal oxide semiconductor (MOS) high electron mobility transistor (HEMT) (MOS HEMT)

Indexed keywords

ALGAN; ALGAN/GAN; ALUMINUM OXIDES; CAPACITANCE VOLTAGE MEASUREMENTS; EXTRINSIC TRANSCONDUCTANCE; FABRICATION PROCESS; GATE DRAIN; GATE VOLTAGE SWING; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; PROCESSING METHOD; SATURATION DRAIN CURRENT DENSITY;

DIELECTRIC DEVICES; GALLIUM NITRIDE; GATE DIELECTRICS; HYDROGEN PEROXIDE; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862855803     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2197370     Document Type: Article

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