AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 284-286

  Huang, L H ^a   Yeh, Shu Hao ^a   Lee, Ching Ting ^a   Tang, Haipeng ^b   Bardwell, Jennifer ^b   Webb, James B ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Ga2O3 and Al2O3 crystalline phases; Interface state density; MOS HEMTs; photoelectrochemical (PEC) oxidation method

Indexed keywords

LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; OXIDE FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; THRESHOLD VOLTAGE;

GATE INSULATOR; INTERFACE-STATE DENSITY; PHOTOASSISTED CAPACITANCE-VOLTAGE METHOD; PHOTOELECTROCHEMICAL OXIDATION METHOD;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749084393     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917326     Document Type: Article

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