AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al2 O3 as gate dielectric

Journal of the Electrochemical Society

Volumn 157, Issue 10, 2010, Pages

  Basu, Sarbani ^a   Singh, Pramod K ^a   Sze, Po Wen ^b   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALTERNATIVE PROCESS; CHANNEL CONDUCTANCE; DEVICE PROCESSING; EXTRINSIC TRANSCONDUCTANCE; GATE OXIDE; GATE-LEAKAGE CURRENT; INTERFACE QUALITY; LIQUID PHASE; LIQUID-PHASE DEPOSITION; LOW TEMPERATURES; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; ORDERS OF MAGNITUDE; SATURATION DRAIN CURRENT DENSITY; SHEET CARRIER CONCENTRATION; VAN DER PAUW METHOD;

ALUMINUM; CARRIER CONCENTRATION; DESCALING; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; GATE DIELECTRICS; GATES (TRANSISTOR); HALL MOBILITY; LEAKAGE CURRENTS; LIQUIDS; MOS DEVICES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956196305     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3473782     Document Type: Article

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