Fabrication of AlGaN/GaN double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SiO 2 and SiN as gate insulators

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages

  Balachander, Krishnan ^a,b   Arulkumaran, Subramaniam ^a   Sano, Y ^c   Egawa, Takashi ^a   Baskar, Krishnan ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b ANNA UNIVERSITY   (India)

^c OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE INSULATORS; METAL-OXIDE SEMICONDUCTORS; SATURATION CURRENT DENSITY;

CURRENT DENSITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 25444491481     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200410002     Document Type: Article

References (14)

1. Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. P. Keller, and U. K. Mishra, IEDM Tech. Dig. 925 (IEEE, Piscataway, NJ, 1999).
2. S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo, Appl. Phys. Lett. 82, 3110 (2003).
3. S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo, Appl. Phys. Lett. 81, 3073 (2002).
4. S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and Y. Sano, Appl. Phys. Lett. 84, 613 (2004).
5. M. A. Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, IEEE Electron Device Lett. 21, 63 (2000).
6. A. Koudymov, H. Fatima, G. Simin, J. Yang, M. A. Khan, A. Tarakji, X. Hu, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 80, 3216 (2002).
7. Y. Z. Chiou, S. J. Chang, Y. K. Su, C. K. Wang, T. K. Lin, and B.-R. Huang, IEEE Trans. Electron Devices 50, 1748 (2003).
8. V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, G. Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, and R. Gaska, IEEE Electron Device Lett. 24, 541 (2003).
9. T. Hashizume, S. Anantatharasan, E. Sano, and H. Hasegawa, Technical Digest AWAD, Japan, June 30-July 2, 2004, p. 153.
10. B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, and J. Han, Appl. Phys. Lett. 80, 1661 (2002).
11. R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, and A. Crespo, Appl. Phys. Lett. 82, 2530 (2003).
12. K. Balachander, S. Arulkumaran, H. Ishikawa, K. Baskar, and T. Egawa, phys. stat. sol. (a) 202, R16 (2005).
13. N.-Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, and T. P. Ma, IEDM Tech. Dig. 589 (2001).
14. E. M. Chumbes, J. A. Smart, T. Prunty, and J. R. Shealy, IEEE Trans. Electron Devices 48, 416 (2001).