Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 91-94

  Muret, P ^a   Philippe, A ^a   Monroy, E ^b   Munoz E ^b   Beaumont, B ^c   Omnes F ^c   Gibart, P ^c  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c CRHEA CNRS   (France)

Author keywords

Capture and emission kinetics; Deep levels; DLTS; DX centers; Gallium nitride

Indexed keywords

CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; FOURIER TRANSFORMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; REACTION KINETICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

CAPTURE-EMISSION KINETICS; HEXAGONAL GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035933184     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00780-7     Document Type: Article

References (15)