Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Kordos P ^a,b   Gregusova D ^b   Stoklas, R ^b   Cico K ^b   Novak J ^b  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM COMPOUNDS; MOS DEVICES; PASSIVATION; TRANSCONDUCTANCE;

CHANNEL ELECTRONS; DRIFT MOBILITY; PARASITIC SERIES RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 33947595383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2716846     Document Type: Article

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