Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography

Nano Letters

Volumn 12, Issue 10, 2012, Pages 5148-5154

  Hruszkewycz, S O ^a   Holt, M V ^a   Murray, C E ^b   Bruley, J ^b   Holt, J ^c   Tripathi, A ^d   Shpyrko, O G ^d   McNulty, I ^a   Highland, M J ^a   Fuoss, P H ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM RESEARCH   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Bragg projection ptychography; coherent X ray diffraction imaging; SiGe heteroepitaxy; silicon on insulator devices; strain imaging

Indexed keywords

BRAGG PROJECTION PTYCHOGRAPHY; COHERENT X-RAY DIFFRACTION; SI-GE HETEROEPITAXY; SILICON-ON-INSULATOR DEVICES; STRAIN IMAGING;

CONTINUUM MECHANICS; EPITAXIAL GROWTH; NONDESTRUCTIVE EXAMINATION; SILICON ALLOYS; STRAIN; X RAY DIFFRACTION;

NANOTECHNOLOGY;

EID: 84867448306     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303201w     Document Type: Article

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