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Volumn 99, Issue 11, 2011, Pages

Elastic relaxation in an ultrathin strained silicon-on-insulator structure

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL TENSILE STRAIN; COHERENT X-RAY DIFFRACTION; DECAY LENGTH; ELASTIC RELAXATION; FREE SURFACES; NANO SCALE; OVER-ETCHING; RELAXATION BEHAVIORS; STRAINED SILICON; STRAINED SILICON-ON-INSULATOR; THREE DIMENSIONAL SIMULATIONS; TWO-DIMENSIONAL MAP; ULTRA-THIN;

EID: 80053200687     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3637634     Document Type: Article
Times cited : (17)

References (18)
  • 13
    • 0344641991 scopus 로고    scopus 로고
    • 10.1088/0022-3727/32/6/020
    • T. Baumbach and D. Lbbert, J. Phys. D 32, 726 (1999). 10.1088/0022-3727/32/6/020
    • (1999) J. Phys. D , vol.32 , pp. 726
    • Baumbach, T.1    Lbbert, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.