Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2910-2917

  Ang, Kah Wee ^a   Chui, King Jien ^a,b   Tung, Chih Hang ^c   Balasubramanian, Narayanan ^c   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d AGENCY FOR SCIENCE   (Singapore)

Author keywords

Lateral tensile strain; N MOSFET; Silicon carbon (Si1 yCy)

Indexed keywords

ELECTRIC CURRENTS; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; TENSILE STRAIN;

COMPRESSIVE STRAIN; DRIVE CURRENT; LATERAL TENSILE STRAIN; SILICON-CARBON; SOURCE/DRAIN REGIONS;

MOSFET DEVICES;

EID: 36248973658     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.906941     Document Type: Article

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