Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers

Ultramicroscopy

Volumn 106, Issue 10, 2006, Pages 951-959

  Houdellier, F ^a   Roucau, C ^a   Clement L ^b   Rouviere J L ^b   Casanove, M J ^a  

^a CEMES CNRS   (France)

^b CEA GRENOBLE   (France)

Author keywords

Convergent beam electron diffraction; Epitaxial growth; Free surface relaxation; Strain measurement

Indexed keywords

ELECTRON DIFFRACTION; EPITAXIAL GROWTH; PERTURBATION TECHNIQUES; RELAXATION PROCESSES; STRAIN MEASUREMENT;

CONVERGENT BEAM ELECTRON DIFFRACTION; FREE SURFACE RELAXATION;

CRYSTALLINE MATERIALS;

SILICON;

ANALYTIC METHOD; ARTICLE; CONVERGENT BEAM ELECTRON DIFFRACTION; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; QUANTITATIVE ANALYSIS; STRESS STRAIN RELATIONSHIP; STRUCTURE ANALYSIS; SURFACE PROPERTY; THEORY; TRANSMISSION ELECTRON MICROSCOPY;

SIGE;

EID: 33747373839     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2006.04.011     Document Type: Article

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