Probing nanoscale local lattice strains in advanced Si complementary metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Huang, J ^a   Kim, M J ^a   Chidambaram, P R ^b   Irwin, R B ^b   Jones, P J ^b   Weijtmans, J W ^b   Koontz, E M ^b   Wang, Y G ^b   Tang, S ^b   Wise, R ^b  

^a The University of Texas at Dallas   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); LATTICE STRAINS; MOS TRANSISTOR; SILICON NITRIDE-CAPPING;

CMOS INTEGRATED CIRCUITS; CRYSTAL LATTICES; ELECTRON DIFFRACTION; GATES (TRANSISTOR); STRAIN; TRANSISTORS;

MOS DEVICES;

EID: 33747106589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2336085     Document Type: Article

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