Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction

Ultramicroscopy

Volumn 110, Issue 10, 2010, Pages 1255-1266

  Ruh, E ^a,b   Mueller, E ^b   Mussler, G ^c   Sigg, H C ^a   Gruetzmacher, D ^c  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

CBED; HOLZ line; Local concentration; Multi quantum well; SiGe; Thin foil relaxation

Indexed keywords

CBED; HOLZ LINE; LOCAL CONCENTRATION; MULTI QUANTUM WELLS; SIGE; THIN FOIL;

CONCENTRATION (PROCESS); ELECTRON DIFFRACTION; ELECTRONS; GERMANIUM; IMAGE RESOLUTION; NANOSTRUCTURES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON ALLOYS; TELECOMMUNICATION REPEATERS; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE CONSTANTS;

GERMANIUM; MULTI QUANTUM WELL; NANOMATERIAL; SILICON; UNCLASSIFIED DRUG;

ACCURACY; ARTICLE; CONCENTRATION (PARAMETERS); CONTROLLED STUDY; CONVERGENT BEAM ELECTRON DIFFRACTION; CRYSTAL STRUCTURE; ELASTICITY; ELECTRON DIFFRACTION; MECHANICAL TORSION; SCANNING ELECTRON MICROSCOPY; THICKNESS;

SIGE;

EID: 77956191167     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2010.05.003     Document Type: Article

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