Barrier engineering in metal-aluminum oxide-nitride-oxide-silicon (MANOS) flash memory: Invited

Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages

  Kang, Chang Yong ^a  

^a SEMATECH   (United States)

Author keywords

Barrier engineering; Blocking oxide; Charge trap flash memory; Metal workfunction; Tunnel barrier

Indexed keywords

BARRIER ENGINEERING; BLOCKING OXIDE; CHARGE TRAP FLASH MEMORY; OXIDE CHARGE; TUNNEL BARRIER;

CHARGE TRAPPING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON MOBILITY; HETEROJUNCTIONS; LOGIC CIRCUITS; LOGIC GATES; NITRIDES; SWITCHING CIRCUITS; WIND TUNNELS;

FLASH MEMORY;

EID: 77649238723     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.007     Document Type: Article

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