Future challenges of flash memory technologies

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 283-286

  Lu, Chih Yuan ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Band to band tunneling hot hole; Bandgap engineered SONOS; Channel hot electron; Charge trapping device; Flash memory; Floating gate; NAND; NOR

Indexed keywords

CHARGE TRAPPING; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ENERGY GAP; HOT CARRIERS; HOT ELECTRONS; MOSFET DEVICES; NANOTECHNOLOGY; TUNNELING (EXCAVATION);

BAND-TO-BAND TUNNELING HOT HOLE; BANDGAP ENGINEERED SONOS; CHANNEL HOT ELECTRON; CHARGE TRAPPING DEVICE; FLOATING GATE; NAND; NOR;

FLASH MEMORY;

EID: 59049101290     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.08.007     Document Type: Article

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