Floating gate technology for high performance 8-level 3-bit NAND flash memory

Solid-State Electronics

Volumn 53, Issue 7, 2009, Pages 792-797

  Kim, Tae Kyung ^a   Chang, Sungnam ^a   Choi, Jeong Hyuk ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

8 Level; Disturbance; Floating gate; MLC; NAND flash

Indexed keywords

8-LEVEL; DISTURBANCE; FLOATING GATE; MLC; NAND FLASH;

CELLS; NAND CIRCUITS; SILICIDES; TUNGSTEN;

FLASH MEMORY;

EID: 67349279609     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.03.019     Document Type: Article

References (13)

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