A study on tunneling current of ONO films and data retention effects in flash memories

Tamkang Journal of Science and Engineering

Volumn 7, Issue 3, 2004, Pages 161-166

  Chen, Shuang Yuan ^a   Huang, Heng Sheng ^a   Wu, Yen Ching ^a   Chen, Mao Quan ^a   Ko, Joe ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Data Retention; Flash Memory; Nonvolatile Memory; ONO

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; PERMITTIVITY; SILICON NITRIDE; THERMAL EFFECTS; THRESHOLD VOLTAGE;

DATA RETENTION; NONVOLATILE MEMORY; OXIDE NITRIDE OXIDE (ONO) FILMS;

FLASH MEMORY;

EID: 4644337855     PISSN: 15606686     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Fazio, A., Keeney, S. and Lai, S., "ETOX™ Flash Memory Technology: Scaling and Integration Challenges," Intel Technology journal, Vol. 6, Issue 2, pp. 23-30 (2002).
2. Bez, R., Camerlenghi, E., Modelli, A. and Visconti A., "Introduction to Flash Memory", Proceedings of the IEEE, Vol. 91 (2003).
3. Cappelletti, P., Golla, C., Olivo, P. and Zanoni, E., Flash memories, Kluwer Academic Publishers, Norwell, Massachusetts 02061, U.S.A., pp. 207-211 (1999).
4. Pan, C. S., Wu, K. J., Freiberger, P. P., Chatterjee, A. and Sery, G., "A Scaling Methodology for Oxide-Nitride-Oxide Interpoly Dielectric for EPROM Applications", IEEE Transactions on Electron Devices, Vol. 37 (1990).
5. Wu, K., Pan, C. S., Shaw, J. J., Freiberger, P. P. and Sery, G., "A Model for EPROM Intrinsic Charge Loss Through Oxide-Nitride-Oxide (ONO) Interpoly Dielectric", IEEE Reliability Physics Symposium, pp. 145-149 (1990).
6. Lim, K. S. and Ling, C. H., "Charge Trapping in Interpoly ONO Film," Proc. of the 1998 IEEE International Conference on Semiconductor Electronics, Bangi, Malaysia, pp. 42-46 (1998).
7. Liu, Z. H., Lai, P. T., Cheng, Y. C., "Characterization of Charge Trapping and High-field Endurance for 15 nm Thermally Nitrided Oxides," IEEE Transactions on Electron Devices, Vol. 38, pp. 344-354 (1991).
8. Kobayashi, K., Miyatake, H., Hirayama, M., Higaki, T., Abe H., "Dielectric Breakdown and Current Conduction of Oxide-Nitride-Oxide Multi-Layer Structures," Journal of Electrochemical Society, Vol. 139, pp. 1693-1699 (1992).
9. Mon, S., Yamaguchi, Y., Sato, M., Meguro, H., Tsunoda, H., Kamiya, E., Yoshikawa, K., Arai, N. and Sakagami, E., "Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices," IEEE Trans. on Electron Devices, 43, pp. 47-53 (1996).