Electrical and reliability studies of "wet N2O" tunnel oxides grown on silicon for flash memory applications

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 3, 2007, Pages 420-428

  Babu, P Naseer ^b   Govind, G ^c   Prasad, S M S ^c   Bhat, K N ^a,d  

^a IEEE

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL PHYSICAL LABORATORY   (India)

^d INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Charge to breakdown; Interface traps; Stress induced leakage current (SILC); Wet N2O oxidation

Indexed keywords

CHARGE TRAPPING; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NITROGEN COMPOUNDS; OXIDATION; RELIABILITY ANALYSIS; WATER VAPOR;

CHARGE-TO-BREAKDOWN; OXIDE THICKNESS; STRESS-INDUCED LEAKAGE CURRENT (SILC);

ELECTRIC BREAKDOWN;

EID: 35948977687     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.907295     Document Type: Article

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