Understanding of the leakage components and its correlation to the oxide scaling on the SONOS cell endurance and retention

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2006, Pages 34-35

  Chen, C H ^a   Chiang, P Y ^a   Chung, Steve S ^a   Chen, Terry ^b   Chou, George C W ^b   Chu, C H ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b ProMOS Technologies Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC CHARGE; ELECTRIC LOSSES; ELECTRON TUNNELING; LEAKAGE CURRENTS; RELIABILITY THEORY;

LEAKAGE COMPONENT; OXIDE QUALITY; OXIDE SCALING;

DATA STORAGE EQUIPMENT;

EID: 34250379990     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2006.251054     Document Type: Conference Paper

References (5)

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5. A. Goda and M. Noguchi, IEEE NVSM Workshop, p. 65, 2003.