Select device disturb phenomenon in TANOS NAND flash memories

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 568-570

  Melde, Thomas ^a   Beug, Marc Florian ^a   Bach, Lars ^a   Tilke, Armin Thomas ^a   Knoefler, Roman ^a   Bewersdorff Sarlette, Ulrike ^a   Beyer, Volkhard ^b   Czernohorsky, Malte ^b   Paul, Jan ^b   Mikolajick, Thomas ^c  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Charge trap (CT); Cycling; Disturb; Erase; NAND; Nonvolatile memory devices; Select device

Indexed keywords

CHARGE TRAP (CT); CYCLING; DISTURB; ERASE; NAND; NONVOLATILE MEMORY DEVICES; SELECT DEVICE;

DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; NAND CIRCUITS; THRESHOLD VOLTAGE;

CHARGE TRAPPING;

EID: 65949104513     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2017497     Document Type: Article

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