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Volumn , Issue , 2006, Pages 691-692
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Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cell
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Author keywords
[No Author keywords available]
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Indexed keywords
INTERFACE TRAPS;
STACK LAYERS;
STRESS EFFECTS;
ANNEALING;
ELECTRIC CHARGE;
ELECTRIC LOSSES;
ELECTRON TRAPS;
FLASH MEMORY;
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EID: 34250775987
PISSN: 15417026
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/RELPHY.2006.251327 Document Type: Conference Paper |
Times cited : (1)
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References (6)
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