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Volumn , Issue , 2006, Pages 18-23

Non-volatile memory technology - Today and tomorrow

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDES; FLASH MEMORY; NAND CIRCUITS; NITRIDES;

EID: 34250679828     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2006.250989     Document Type: Conference Paper
Times cited : (39)

References (15)
  • 4
    • 0027675648 scopus 로고
    • Charge Retention in Scaled SONOS Nonvolatile Semiconductor Memory Devices-Modeling and Characterization
    • Y. Hu and M.H. White, "Charge Retention in Scaled SONOS Nonvolatile Semiconductor Memory Devices-Modeling and Characterization", Solid-State Electronics, 36, pp.1401-1415, 1993.
    • (1993) Solid-State Electronics , vol.36 , pp. 1401-1415
    • Hu, Y.1    White, M.H.2
  • 10
    • 0035717521 scopus 로고    scopus 로고
    • OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications
    • S. Lai and T. Lowrey, "OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications", in Tech. Dig. 2001 Inter. Electron Dev. Meeting (IEDM), pp. 803-806, 2001.
    • (2001) Tech. Dig. 2001 Inter. Electron Dev. Meeting (IEDM) , pp. 803-806
    • Lai, S.1    Lowrey, T.2
  • 12
    • 0842266493 scopus 로고    scopus 로고
    • An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device
    • Y.C. Chen, J.F. Chen, C.T. Chen, J.Y. Wu, S.L. Lung, R. Liu and C.Y. Lu, "An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device", in Tech. Dig, 2003 Inter, Electron Dev. Meeting (IEDM), pp. 909-912, 2003.
    • (2003) Tech. Dig, 2003 Inter, Electron Dev. Meeting (IEDM) , pp. 909-912
    • Chen, Y.C.1    Chen, J.F.2    Chen, C.T.3    Wu, J.Y.4    Lung, S.L.5    Liu, R.6    Lu, C.Y.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.