-
1
-
-
0029514106
-
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxide
-
R. Degraeve, G. Groeseneken, R. Bellens, M. Depas and H.E. Maes, "A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxide", in Tech. Dig. 1995 Inter. Electron Dev. Meeting (IEDM), pp. 863-866, 1995.
-
(1995)
Tech. Dig. 1995 Inter. Electron Dev. Meeting (IEDM)
, pp. 863-866
-
-
Degraeve, R.1
Groeseneken, G.2
Bellens, R.3
Depas, M.4
Maes, H.E.5
-
2
-
-
4444223758
-
Analytical percolation model for predicting anomalous charge loss in flash memories
-
R. Degraeve, F. Schuler, B. Kaczer, M. Lorenzini, D. Wellekens, P. Hendrickx, M van Duuren, G. J. M. Dormans, J. Van Houdt, L. Haspeslagh, G. Groeseneken, and G. Tempel, "Analytical percolation model for predicting anomalous charge loss in flash memories", IEEE Trans. Electron Dev. 51, No.9, pp. 1392-1400, 2004.
-
(2004)
IEEE Trans. Electron Dev
, vol.51
, Issue.9
, pp. 1392-1400
-
-
Degraeve, R.1
Schuler, F.2
Kaczer, B.3
Lorenzini, M.4
Wellekens, D.5
Hendrickx, P.6
van Duuren, M.7
Dormans, G.J.M.8
Van Houdt, J.9
Haspeslagh, L.10
Groeseneken, G.11
Tempel, G.12
-
3
-
-
27144559971
-
The Future Prospect of Nonvolatile Memory
-
Kinam Kim, J. H. Choi, J. Choi, and H.-S. Jeong, "The Future Prospect of Nonvolatile Memory", in Proc. VLSI-TSA 2005 (Hsinchu, Taiwan, ROC), pp. 88-94, 2005.
-
(2005)
Proc. VLSI-TSA 2005 (Hsinchu, Taiwan, ROC)
, pp. 88-94
-
-
Kinam Kim, J.1
Choi, H.2
Choi, J.3
Jeong, H.-S.4
-
4
-
-
0027675648
-
Charge Retention in Scaled SONOS Nonvolatile Semiconductor Memory Devices-Modeling and Characterization
-
Y. Hu and M.H. White, "Charge Retention in Scaled SONOS Nonvolatile Semiconductor Memory Devices-Modeling and Characterization", Solid-State Electronics, 36, pp.1401-1415, 1993.
-
(1993)
Solid-State Electronics
, vol.36
, pp. 1401-1415
-
-
Hu, Y.1
White, M.H.2
-
5
-
-
0034315780
-
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
-
B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, "NROM: A novel localized trapping, 2-bit nonvolatile memory cell", IEEE Electron Dev. Lett., 21, No. 11, pp. 543-545, 2000.
-
(2000)
IEEE Electron Dev. Lett
, vol.21
, Issue.11
, pp. 543-545
-
-
Eitan, B.1
Pavan, P.2
Bloom, I.3
Aloni, E.4
Frommer, A.5
Finzi, D.6
-
6
-
-
0035714879
-
Data retention behavior of a SONOS type two-bit storage flash memory cell
-
W. J. Tsai, N. K. Zous, C. J. Liu, C. C. Liu, C. H. Chen, T. Wang, S. Pan, C. Y. Lu, and S. H. Gu, "Data retention behavior of a SONOS type two-bit storage flash memory cell", in Tech. Dig. 2001 Inter. Electron Dev. Meeting (IEDM), pp. 719-722, 2001.
-
(2001)
Tech. Dig. 2001 Inter. Electron Dev. Meeting (IEDM)
, pp. 719-722
-
-
Tsai, W.J.1
Zous, N.K.2
Liu, C.J.3
Liu, C.C.4
Chen, C.H.5
Wang, T.6
Pan, S.7
Lu, C.Y.8
Gu, S.H.9
-
7
-
-
34250348796
-
Analysis of Electron and Hole Distributions on scaled NBit Flash Cells
-
I.C. Yang, K.P. Chen, Y.W. Chang, and T.C. Lu, "Analysis of Electron and Hole Distributions on scaled NBit Flash Cells", in Proc. of 2006 VLSI-TSA (Hsinchu, Taiwan, ROC), pp. 30-31, 2006.
-
(2006)
Proc. of 2006 VLSI-TSA (Hsinchu, Taiwan, ROC)
, pp. 30-31
-
-
Yang, I.C.1
Chen, K.P.2
Chang, Y.W.3
Lu, T.C.4
-
8
-
-
33847731449
-
Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories
-
L. Pemiola, G. Iannaccone, B. De Salvo, G. Ghibaudo, G. Molas, C. Gerardi, and S. Deleonibus, "Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories", in Tech. Dig. 2005 Inter. Electron Dev. Meeting (IEDM), pp. 877-880, 2005.
-
(2005)
Tech. Dig. 2005 Inter. Electron Dev. Meeting (IEDM)
, pp. 877-880
-
-
Pemiola, L.1
Iannaccone, G.2
De Salvo, B.3
Ghibaudo, G.4
Molas, G.5
Gerardi, C.6
Deleonibus, S.7
-
9
-
-
0029516376
-
Volatile and Non-volatile Memories in Silicon with Nano-crystal Storage
-
S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, "Volatile and Non-volatile Memories in Silicon with Nano-crystal Storage", in Tech. Dig. 1995 Inter. Electron Dev. Meeting (IEDM), pp. 521-524, 1995.
-
(1995)
Tech. Dig. 1995 Inter. Electron Dev. Meeting (IEDM)
, pp. 521-524
-
-
Tiwari, S.1
Rana, F.2
Chan, K.3
Hanafi, H.4
Chan, W.5
Buchanan, D.6
-
10
-
-
0035717521
-
OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications
-
S. Lai and T. Lowrey, "OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications", in Tech. Dig. 2001 Inter. Electron Dev. Meeting (IEDM), pp. 803-806, 2001.
-
(2001)
Tech. Dig. 2001 Inter. Electron Dev. Meeting (IEDM)
, pp. 803-806
-
-
Lai, S.1
Lowrey, T.2
-
11
-
-
21644479869
-
Highly manufacturable high density phase change memory of 64Mb and beyond
-
S.J. Ahn, Y.J. Song, C.W. Jeong, J.M. Shin, Y. Fai, Y.N. Hwang, S.H. Lee, K.C. Ryoo, S.Y. Lee, J.H. Park, H. Horii, Y.H. Ha, J.H. Yi, B.J. Kuh, G.H. Koh, G.T. Jeong, H.S. Jeong, Kinam Kim and B.I. Ryu, "Highly manufacturable high density phase change memory of 64Mb and beyond", in Tech. Dig. 2004 Inter. Electron Dev. Meeting (IEDM), pp. 907-910, 2004.
-
(2004)
Tech. Dig. 2004 Inter. Electron Dev. Meeting (IEDM)
, pp. 907-910
-
-
Ahn, S.J.1
Song, Y.J.2
Jeong, C.W.3
Shin, J.M.4
Fai, Y.5
Hwang, Y.N.6
Lee, S.H.7
Ryoo, K.C.8
Lee, S.Y.9
Park, J.H.10
Horii, H.11
Ha, Y.H.12
Yi, J.H.13
Kuh, B.J.14
Koh, G.H.15
Jeong, G.T.16
Jeong, H.S.17
Kim, K.18
Ryu, B.I.19
-
12
-
-
0842266493
-
An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device
-
Y.C. Chen, J.F. Chen, C.T. Chen, J.Y. Wu, S.L. Lung, R. Liu and C.Y. Lu, "An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device", in Tech. Dig, 2003 Inter, Electron Dev. Meeting (IEDM), pp. 909-912, 2003.
-
(2003)
Tech. Dig, 2003 Inter, Electron Dev. Meeting (IEDM)
, pp. 909-912
-
-
Chen, Y.C.1
Chen, J.F.2
Chen, C.T.3
Wu, J.Y.4
Lung, S.L.5
Liu, R.6
Lu, C.Y.7
-
13
-
-
0842266575
-
A novel SONOS structure of SiO2/SiN/Al2O3 with TaN metal gate for multi-giga bit flash memories
-
C.H. Lee, K. I. Choi, M. K. Cho, Y. H. Song, K. C. Park, and K. Kim, 'A novel SONOS structure of SiO2/SiN/Al2O3 with TaN metal gate for multi-giga bit flash memories", Tech. Dig. 2003 Inter. Electron Dev. Meeting (IEDM), pp. 613-616, 2003.
-
(2003)
Tech. Dig. 2003 Inter. Electron Dev. Meeting (IEDM)
, pp. 613-616
-
-
Lee, C.H.1
Choi, K.I.2
Cho, M.K.3
Song, Y.H.4
Park, K.C.5
Kim, K.6
-
14
-
-
33751026939
-
Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory
-
C. H. Lee, C. Kang, J. Sim, J. S. Lee, J. Kim, Y. Shin, K. T. Park, S. Jeon, J. Sel, Y. Jeong, B. Choi, V. Kim, W. Jung, C. I. Hyun, J, Choi, and K. Kim, "Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory," in Proc. Non-Volatile Semiconductor Memory Workshop (NVSMW) 2006, pp.54-55.
-
(2006)
Proc. Non-Volatile Semiconductor Memory Workshop (NVSMW)
, pp. 54-55
-
-
Lee, C.H.1
Kang, C.2
Sim, J.3
Lee, J.S.4
Kim, J.5
Shin, Y.6
Park, K.T.7
Jeon, S.8
Sel, J.9
Jeong, Y.10
Choi, B.11
Kim, V.12
Jung, W.13
Hyun, C.I.14
Choi, J.15
Kim, K.16
-
15
-
-
33847734692
-
BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability
-
H.T. Lue, S.Y. Wang, E.K. Lai, Y.H. Shih, S.C. Lai, L. W. Yang, K. C. Chen, J. Ku, K.Y. Hsieh, R. Liu, and C.Y. Lu, "BE-SONOS: a bandgap engineered SONOS with excellent performance and reliability", in Tech. Dig. 2005 Inter. Electron Dev. Meeting (IEDM), pp. 555-558, 2005.
-
(2005)
Tech. Dig. 2005 Inter. Electron Dev. Meeting (IEDM)
, pp. 555-558
-
-
Lue, H.T.1
Wang, S.Y.2
Lai, E.K.3
Shih, Y.H.4
Lai, S.C.5
Yang, L.W.6
Chen, K.C.7
Ku, J.8
Hsieh, K.Y.9
Liu, R.10
Lu, C.Y.11
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