Defect passivation with fluorine and interface engineering for Hf-based high-κ/metal gate stack device reliability and performance enhancement

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3267-3275

  Tseng, Hsing Huang ^a   Tobin, Philip ^b   Kalpat, Sriram ^b   Schaeffer, Jamie K ^b   Ramón, Michael E ^b   Fonseca, Leonardo R C ^c   Jiang, Zhixiong X ^b   Hegde, R I ^b   Triyoso, Dina H ^b   Semavedam, S ^b  

^a SEMATECH   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Wernher von Braun Center for Advanced Research   (Brazil)

Author keywords

Defect passivation; Defects; Device performance; High dielectric; Interface engineering; Metal gates; Passivation; Reliability; Threshold stability; Threshold voltage stability reliability

Indexed keywords

ELECTRON MOBILITY; FLUORINE; HAFNIUM; PASSIVATION; POLYSILICON; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

DEFECT PASSIVATION; METAL GATE STACK; STRESS RELIEVED PREOXIDE;

GATES (TRANSISTOR);

EID: 38149085383     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908897     Document Type: Article

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