Accurate program simulation of TANOS charge trapping devices

Proceedings - 2008 9th Annual Non-Volatile Memory Technology Symposium, NVMTS 2008

Volumn , Issue , 2008, Pages

  Melde, Thomas ^a   Beug, M Florian ^a   Bach, Lars ^a   Riedel, Stephan ^a   Chan, Nigel ^a   Ludwig, Christoph ^a   Mikolajick, Thomas ^a,b  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Flash memories; High dielectric constant (high k); Metal gate; Polysilicon oxide nitride oxide silicon (SONOS); Simulation; Tunneling

Indexed keywords

CERAMIC CAPACITORS; CHARGE TRAPPING; DIELECTRIC WAVEGUIDES; ELECTRON TUBE DIODES; FLASH MEMORY; NITRIDES; PERMITTIVITY; POLYSILICON;

FLASH MEMORIES; HIGH DIELECTRIC CONSTANT (HIGH-K); METAL GATE; POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS); SIMULATION; TUNNELING;

DATA STORAGE EQUIPMENT;

EID: 62349113628     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2008.4731201     Document Type: Conference Paper

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