Reliability characteristics of TANOS (TaN/AlO/SiN/Oxide/Si) NAND flash memory with rounded corner (RC) structure

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 117-118

  Chang, Sung Il ^a   Lee, Chang Hyun ^a   Kang, Changseok ^a   Jeon, Sanghun ^a   Kim, Juhyung ^a   Choi, Byeong In ^a   Park, Youngwoo ^a   Park, Jintaek ^a   Jeong, Wonseok ^a   You, Janghyun ^a   Choi, Bonghyun ^a   Sel, Jongsun ^a   Jae, Sung Sim ^a   Shin, Yoocheol ^a   Choi, Jungdal ^a   Lee, Won Seong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 50249125415     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.40     Document Type: Conference Paper

References (5)

1. Y. Park et al., IEDM Tech. Dig., pp.29-31, 2006.
2. D. Kwak et al., VLSI Tech. Dig., pp. 12-13, 2007.
3. S. Lee et al., IEDM Tech. Dig., pp.1-4, 2006.
4. S. Lee et al., NVSM Workshop, pp. 101-102, 2007.
5. S.-C. Lai et al., NVSM Workshop, pp. 88-89, 2007.