High work-function oxygen-bearing electrodes for improved performance in MANOS charge-trap NVM and MIM-DRAM type devices

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Gilmer, D C ^a   Goel, N ^b   Park, H ^a   Park, C ^a   Barnett, J ^a   Kirsch, P D ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP; FREE OXYGEN; META-STABLE; OXYNITRIDES; THERMAL PROCESSING; TIN ELECTRODES;

BEARINGS (STRUCTURAL); DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; MOLYBDENUM; MOON; NITRIDES; OXYGEN; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

MIM DEVICES;

EID: 70349993199     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090594     Document Type: Conference Paper

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