Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1870-1875

  Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Charge trap memory; CMOS reliability; Flash memory; Nonvolatile memory; Phase change memory; Reliability modeling; Resistive switching memory; Trapping

Indexed keywords

CHARGE-TRAP MEMORY; CMOS RELIABILITY; NONVOLATILE MEMORY; RELIABILITY MODELING; RESISTIVE SWITCHING MEMORY; TRAPPING;

CHARGE TRAPPING; MODELS; PHASE CHANGE MEMORY; RELIABILITY; SWITCHING SYSTEMS;

FLASH MEMORY;

EID: 67349086061     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.054     Document Type: Article

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