A new reliability model for post-cycling charge retention of Flash memories

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 7-20

  Belgal, Hanmant P ^a   Righos, Nick ^a   Kalastirsky, Ivan ^a   Peterson, Jeff J ^a   Shiner, Robert ^a   Mielke, Neal ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRIC CHARGE; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; RELIABILITY;

SINGLE MODEL EQUATION;

FLASH MEMORY;

EID: 0036089046     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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