Novel silicon-based flash cell structures for low power and high density memory applications

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 709-712

  Huang, Ru ^a   Zhou, Falong ^a   Li, Yan ^a   Cai, Yimao ^a   Shan, Xiaonan ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; DATA STORAGE EQUIPMENT; POLYSILICON; ROM; SEMICONDUCTOR DOPING;

FLOATING GATE; HIGH DENSITY MEMORY APPLICATIONS; SILICON-BASED FLASH CELL STRUCTURES;

FLASH MEMORY;

EID: 34547359686     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306465     Document Type: Conference Paper

References (14)

1. R.Bez et al., Proc IEEE, vol.85, p.1248-1271, Aug.1997.
2. S.S.Chung et al., IEDM Tech.Dig.,p.617-620, 2003.
3. B.De Salvo et al., IEDM. Tech. Dig. P.597-600, 2003.
4. R.Ohba et al., IEEE Trans. Electron Devices, vol.49, p.1392-1398, Nov.2002.
5. M.Gill et al., ISSC Tech. Dig., p.202-204, 2002.
6. W.Y.Cho et al., ISSCC Dig. of Tech. Papers, p.40, 2004.
7. S.Tehrani et al., Proc. IEEE, vol.91, p.703-714, 2003.
8. Jiunn-Ren Hwang, et al., IEDM Tech. Dig., p.154-157, 2005.
9. Peiqi Xuan, et al., IEDM Tech. Dig., p.2641-2644, 2003.
10. C.H.Lee et al., IEDM. Tech. Dig., p.6.13-616, 2003.
11. B. Govoreanu et al., IEEE Electron Device Letters, pp.99-101, Vol.24, 2003.
12. B. Eitan et al., IEEE Electron Device Lett., vol. 21, no. 6, Jun. 2000, pp. 543-545.
13. E. Mayaan, et al., ISSCC Tech. Dig., pp.100-101, 2002.
14. L. Breuil, et al., IEEE Trans. Electron Devices, vol. 52, pp. 2250 - 2257, 2005.