Nitride engineering and the effect of interfaces on Charge Trap Flash performance and reliability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 406-411

  Sandhya, C ^a   Ganguly, U ^a,b   Singh, K K ^b   Singh, P K ^a,b   Olsen, C ^b   Seutter, S M ^b   Hung, R ^b   Conti, G ^b   Ahmed, K ^b   Krishna, N ^b   Vasi, J ^a   Mahapatra, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Bandgap engineering; Charge Trap Flash; Data retention; Endurance; SONOS EEPROMs

Indexed keywords

CHARGE TRAPPING; EPITAXIAL GROWTH; NITRIDES; SILICON; WINDOWS;

BANDGAP ENGINEERING; CHARGE TRAP FLASH; DATA RETENTION; ENDURANCE; SONOS EEPROMS;

RELIABILITY;

EID: 51549115900     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558919     Document Type: Conference Paper

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