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Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 16, 2009, Pages

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

(10) Haxha, V a Drouzas, I b,c Ulloa, J M c Bozkurt, M c Koenraad, P M c Mowbray, D J b Liu, H Y d Steer, M J d Hopkinson, M d Migliorato, M A a

a UNIVERSITY OF MANCHESTER (United Kingdom)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

c EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

d Engineering and Physical Sciences Research Council UK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 72849139037 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.80.165334 Document Type: Article

Times cited : (43)

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