1.5 μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 81-84

  Akahane, Kouichi ^a   Yamamoto, Naokatsu ^a   Gozu, Shin ichiro ^a   Ueta, Akio ^a   Ohtani, Naoki ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b DOSHISHA UNIVERSITY   (Japan)

Author keywords

InGaAsSb; Quantum dot; Strain reducing layer

Indexed keywords

ANTIMONY; COMPRESSIVE STRENGTH; ELECTRON TRANSITIONS; LATTICE CONSTANTS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

EMISSION WAVELENGTH; INGAASSB; STRAIN-REDUCING LAYERS; TRANSFER MATRIX METHODS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747882050     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.018     Document Type: Article

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