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Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 151-155

Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

(6) Gutierrez M a Hopkinson, M a Liu, H Y a Herrera, M b Gonzalez D b Garcia R b

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b UNIVERSITY OF CÁDIZ (Spain)

Author keywords

A1. Defect; A1. TEM; A3. DWELL; A3. MBE; A3. Quantum dots; B1. GaAs

Indexed keywords

COMPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

BARRIERS; DOT-IN-WELL (DWELL); THRESHOLD CURRENTS; ULTRA-LOW THRESHOLD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18444387728 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.179 Document Type: Conference Paper

Times cited : (9)

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