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Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

Comparative study of InAs quantum dots with different InGaAs capping methods

(4) Lin, C H a Pai, Woei Wu a Chang, F Y a Lin, H H a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STATISTICAL METHODS; STRESS RELAXATION;

BINARY GROWTH; QUANTUM CONFINEMENT EFFECTS; STRAIN RELAXATION; WAVELENGTH EMISSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846997518 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2454425 Document Type: Article

Times cited : (26)

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