Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga0.85In0.15As quantum well

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 33-38

  Popescu, Dan P ^a   Eliseev, Peter G ^a   Stintz, Andreas ^a   Malloy, Kevin J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; ENERGY GAP; ESTIMATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; REACTION KINETICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

ELECTRON HOLE RECOMBINATION; OPTICAL EXCITATION; RATE EQUATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0346497619     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/005     Document Type: Article

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