메뉴 건너뛰기




Volumn , Issue , 2008, Pages 1-622

The materials science of semiconductors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84892220135     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-0-387-68650-9     Document Type: Book
Times cited : (108)

References (276)
  • 6
    • 9444296051 scopus 로고    scopus 로고
    • Organic electroluminescent devices
    • Sheats, J.; "Organic electroluminescent devices". Science, 1996; 273: 884-8.
    • (1996) Science , vol.273 , pp. 884-888
    • Sheats, J.1
  • 7
    • 0242302738 scopus 로고    scopus 로고
    • The road to high efficiency organic light emitting devices
    • Forrest, Stephen R.; "The road to high efficiency organic light emitting devices", Organic Electronics 2003; 4: 45-48.
    • (2003) Organic Electronics , vol.4 , pp. 45-48
    • Forrest, S.R.1
  • 13
    • 0001860254 scopus 로고
    • Lattice vibrations and heat transport in crystals and glasses
    • Cahill, David G, and Pohl, R.O., Lattice Vibrations and Heat Transport in Crystals and Glasses, Ann. Rev. Phys. Chem. 1988; 39: 93-121.
    • (1988) Ann. Rev. Phys. Chem. , vol.39 , pp. 93-121
    • Cahill, D.G.1    Pohl, R.O.2
  • 14
    • 33744685518 scopus 로고
    • Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
    • Chelikowsky, J.R. and Cohen, M.L. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B 1976; 14: 556-582.
    • (1976) Phys. Rev. B , vol.14 , pp. 556-582
    • Chelikowsky, J.R.1    Cohen, M.L.2
  • 20
    • 0642275027 scopus 로고    scopus 로고
    • Spontaneous polarization and piezoelectric constants of III-V nitrides
    • Bernardini, F.; Fiorentini, V.; Vanderbilt, D.; "Spontaneous polarization and piezoelectric constants of III-V nitrides." Physical Review B, 1997; 56: R10024-7.
    • (1997) Physical Review B , vol.56
    • Bernardini, F.1    Fiorentini, V.2    Vanderbilt, D.3
  • 22
    • 84892253837 scopus 로고    scopus 로고
    • Structural properties of SiC and SiGeC alloy layers on Si
    • Erich Kasper and Klara Lyutovich, eds., London, INSPEC
    • Eberl, K.; Schmidt, O.G.; and Duschl, R.; "Structural Properties of SiC and SiGeC Alloy Layers on Si," in Properties of Silicon Germanium and SiGe: Carbon. Erich Kasper and Klara Lyutovich, eds., London, INSPEC, 2000.
    • (2000) Properties of Silicon Germanium and SiGe: Carbon
    • Eberl, K.1    Schmidt, O.G.2    Duschl, R.3
  • 27
    • 0001860254 scopus 로고
    • Lattice vibrations and heat transport in crystals and glasses
    • Cahill, David G.; and Pohl, R.O.; "Lattice Vibrations and Heat Transport in Crystals and Glasses." Ann. Rev. Phys. Chem., 1988; 39: 93-121.
    • (1988) Ann. Rev. Phys. Chem. , vol.39 , pp. 93-121
    • Cahill David, G.1    Pohl, R.O.2
  • 28
    • 84892307037 scopus 로고    scopus 로고
    • University of Illinois, Department of Electrical and Computer Engineering, private communication
    • Holonyak, N.; University of Illinois, Department of Electrical and Computer Engineering, private communication.
    • Holonyak, N.1
  • 30
    • 33744685518 scopus 로고
    • Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
    • Chelikowsky, J.R. and Cohen, M.L.; Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B 1976; 14: 556-582.
    • (1976) Phys. Rev. B , vol.14 , pp. 556-582
    • Chelikowsky, J.R.1    Cohen, M.L.2
  • 33
    • 0004232256 scopus 로고    scopus 로고
    • New York: John Wiley & Sons
    • Chang, C.Y. and Sze, S.M., editors, ULSI devices, New York: John Wiley & Sons, 2000.
    • (2000) ULSI Devices
    • Chang, C.Y.1    Sze, S.M.2
  • 47
    • 0002478487 scopus 로고
    • A simple man's view of the thermochemistry of semiconductors
    • ed. T.S. Moss, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, Chapter 1
    • Van Vechten, J.A., "A Simple Man's View of the Thermochemistry of Semiconductors" in Handbook on Semiconductors, ed. T.S. Moss, Vol. 3, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, 1980, Chapter 1.
    • (1980) Handbook on Semiconductors , vol.3
    • Van Vchten, J.A.1
  • 55
    • 0002478487 scopus 로고
    • A simple man's view of the thermochemistry of semiconductors
    • ed. T.S. Moss, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, Chapter 1
    • Van Vechten, J.A., "A Simple Man's View of the Thermochemistry of Semiconductors" in Handbook on Semiconductors, ed. T.S. Moss, Vol. 3, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, 1980, Chapter 1.
    • (1980) Handbook on Semiconductors , vol.3
    • Van Vechten, J.A.1
  • 58
    • 0003877758 scopus 로고    scopus 로고
    • Boca Raton, FL: Chapman and Hall/CRC
    • Lide, David R., editor, CRC Handbook of Chemistry and Physics. Boca Raton, FL: Chapman and Hall/CRC, 2001; also available on line at http://www.hbcpnetbase.com/.
    • (2001) CRC Handbook of Chemistry and Physics
    • Lide, D.R.1
  • 59
    • 0016486474 scopus 로고
    • Tight binding calculations of the valence bands of diamond and zincblende crystals
    • Chadi, D.J. and Cohen, M.L. "Tight binding calculations of the valence bands of diamond and zincblende crystals." Physica Status Solidi B, 1975; 68: 405-19.
    • (1975) Physica Status Solidi B , vol.68 , pp. 405-419
    • Chadi, D.J.1    Cohen, M.L.2
  • 60
    • 33744685518 scopus 로고
    • Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
    • Chelikowsky, J.R. and Cohen, M.L. "Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors." Phys. Rev. B, 1976; 14: 556-582.
    • (1976) Phys. Rev. B , vol.14 , pp. 556-582
    • Chelikowsky, J.R.1    Cohen, M.L.2
  • 62
    • 0001657647 scopus 로고
    • Inverse-photoemission study of Ge(100), Si(100), and GaAs(100): Bulk bands and surface states
    • Ortega, J.E., and Himpsel, F.J. "Inverse-photoemission study of Ge(100), Si(100), and GaAs(100): bulk bands and surface states." Phys. Rev. B, 1993; 47(4): 2130-7.
    • (1993) Phys. Rev. B , vol.47 , Issue.4 , pp. 2130-2137
    • Ortega, J.E.1    Himpsel, F.J.2
  • 63
    • 0000241888 scopus 로고
    • Band structure-dependent transport and impact ionization in GaAs
    • Shichijo, H, and Hess, K. "Band structure-dependent transport and impact ionization in GaAs." Phys. Rev. B, 1981; 23: 4197-4207.
    • (1981) Phys. Rev. B , vol.23 , pp. 4197-4207
    • Shichijo, H.1    Hess, K.2
  • 64
    • 40849125823 scopus 로고
    • Epitaxial crystal growth by sputter deposition: Applications to semiconductors II
    • Greene, J.E, Epitaxial crystal growth by sputter deposition: applications to semiconductors II. CRC Critical Reviews in Solid State and Materials Sciences, 1984; 11:189-227.
    • (1984) CRC Critical Reviews in Solid State and Materials Sciences , vol.11 , pp. 189-227
    • Greene, J.E.1
  • 67
    • 36149021742 scopus 로고
    • A theory of cooperative phenomena
    • Kikuchi, Ryoichi, A Theory of Cooperative Phenomena. Phys. Rev., 1951; 81: 988-1003.
    • (1951) Phys. Rev. , vol.81 , pp. 988-1003
    • Kikuchi, R.1
  • 68
    • 0035540767 scopus 로고    scopus 로고
    • Nobel lecture: Quasielectric fields and band offsets: Teaching electrons new tricks
    • Kroemer, Herbert, "Nobel lecture: quasielectric fields and band offsets: teaching electrons new tricks". Rev. Modern Phys., 2001; 73:783-793.
    • (2001) Rev. Modern Phys. , vol.73 , pp. 783-793
    • Kroemer, H.1
  • 70
    • 0002478487 scopus 로고
    • A simple man's view of the thermochemistry of semiconductors
    • ed. T.S. Moss, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, Chapter 1
    • Van Vechten, J.A., "A Simple Man's View of the Thermochemistry of Semiconductors" in Handbook on Semiconductors, ed. T.S. Moss, Vol. 3, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, 1980, Chapter 1.
    • (1980) Handbook on Semiconductors , vol.3
    • Van Vechten, J.A.1
  • 72
    • 0035356466 scopus 로고    scopus 로고
    • Band parameters for III-V com- pound semiconductors and their alloys
    • Vurgaftman, I., Meyer, J.R., and Ram-Mohan, L.R., "Band parameters for III-V com- pound semiconductors and their alloys." J. Appl. Phys., 2001; 89:5815-75.
    • (2001) J. Appl. Phys. , vol.89 , pp. 5815-5875
    • Vurgaftman, I.1    Meyer, J.R.2    Ram-Mohan, L.R.3
  • 73
    • 0042099114 scopus 로고    scopus 로고
    • 2nd edition. Cambridge: Cambridge University Press, Chapter 13
    • Schubert, E.F., Light Emitting Diodes, 2nd edition. Cambridge: Cambridge University Press, 2006, Chapter 13
    • (2006) Light Emitting Diodes
    • Schubert, E.F.1
  • 74
    • 0029373787 scopus 로고
    • Band offsets and optical bowings of chalcopyrites and Znbased II-VI alloys
    • Wei, S-H., and Zunger, A., "Band offsets and optical bowings of chalcopyrites and Znbased II-VI alloys." J. Appl. Phys., 1995; 78: 3846-56.
    • (1995) J. Appl. Phys. , vol.78 , pp. 3846-3856
    • Wei, S.-H.1    Zunger, A.2
  • 75
    • 0031208686 scopus 로고    scopus 로고
    • 1-y epitaxial layers as a function of composition and temperature
    • Faschinger, W., "The energy gap Eg of Zn1-xMgxSySe1-y epitaxial layers as a function of composition and temperature." Semicond. Sci. Technol., 1997; 12: 970-3.
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 970-973
    • Faschinger, W.1
  • 76
    • 0002768427 scopus 로고
    • Short-range order in III-V ternary alloy semiconductors
    • Ichimura, M., and Sasaki, A., "Short-range order in III-V ternary alloy semiconductors." J. Appl. Phys., 1986; 60: 3850-5.
    • (1986) J. Appl. Phys. , vol.60 , pp. 3850-3855
    • Ichimura, M.1    Sasaki, A.2
  • 77
    • 29144453140 scopus 로고
    • Effect of invariance requirements on the elastic strain energy of crystals with application to the diamond structure
    • Keating, P.N., "Effect of invariance requirements on the elastic strain energy of crystals with application to the diamond structure." Phys. Rev., 1966; 145: 637-45.
    • (1966) Phys. Rev. , vol.145 , pp. 637-645
    • Keating, P.N.1
  • 78
    • 0020139428 scopus 로고
    • Unstable regions in III-V quaternary solid solutions composition plane calculated with strictly regular solution approximation
    • Onabe, K., "Unstable regions in III-V quaternary solid solutions composition plane calculated with strictly regular solution approximation." Jpn. J. Appl. Phys., 1982; 21: L323-5.
    • (1982) Jpn. J. Appl. Phys. , vol.21
    • Onabe, K.1
  • 80
    • 0343019206 scopus 로고
    • Quantum dielectric theory of electronegativity in covalent systems. 11. Ionization potentials and interband transition energies
    • Van Vechten, J.A., "Quantum dielectric theory of electronegativity in covalent systems. 11. Ionization potentials and interband transition energies." Phys. Rev., 1969; 187: 1007-20.
    • (1969) Phys. Rev. , vol.187 , pp. 1007-1020
    • Van Vechten, J.A.1
  • 81
    • 33748960798 scopus 로고
    • Electronic structures of semiconductor alloys
    • Van Vechten, J.A., and Bergstresser, T.K., "Electronic structures of semiconductor alloys." Phys. Rev. B, 1970; 1: 3351-8.
    • (1970) Phys. Rev. B , vol.1 , pp. 3351-3358
    • Van Vechten, J.A.1    Bergstresser, T.K.2
  • 82
    • 17044382706 scopus 로고    scopus 로고
    • Crystal structure, lattice parameters and liquidus-solidus curve of the SiGe system
    • Erich Kasper and Klara Lyutovich, eds., London, INSPEC
    • See Herzog, H.J.; "Crystal structure, lattice parameters and liquidus-solidus curve of the SiGe system," in Properties of Silicon Germanium and SiGe.Carbon. Erich Kasper and Klara Lyutovich, eds., London, INSPEC, 2000, p. 45.
    • (2000) Properties of Silicon Germanium and SiGe.Carbon , pp. 45
    • Herzog, H.J.1
  • 83
    • 84892308455 scopus 로고    scopus 로고
    • Ordering in SiGe alloys
    • Erich Kasper and Klara Lyutovich, eds., London, INSPEC
    • Jager, W.; "Ordering in SiGe alloys," in Properties of Silicon Germanium and SiGe.Carbon. Erich Kasper and Klara Lyutovich, eds., London, INSPEC, 2000, p. 50.
    • (2000) Properties of Silicon Germanium and SiGe.Carbon , pp. 50
    • Jager, W.1
  • 84
    • 0016353759 scopus 로고
    • Diffuse X-ray determination of the energy of mixing and elastic constants of Ge-Si solid solutions
    • Bublik, V.T., Gorelik, S.S., Zaitsev, A.A., and Polyakov, A.Y., "Diffuse X-ray determination of the energy of mixing and elastic constants of Ge-Si solid solutions." Phys Status Solidi B, 1974; 66: 427-32.
    • (1974) Phys Status Solidi B , vol.66 , pp. 427-432
    • Bublik, V.T.1    Gorelik, S.S.2    Zaitsev, A.A.3    Polyakov, A.Y.4
  • 86
    • 84864964169 scopus 로고    scopus 로고
    • Energy gaps and band structure of SiGe and their temperature dependence
    • Kasper, Erich, and Lyutovich, Klara, editors. London: INSPEC
    • Penn, C.; Fromherz, T; and Bauer, G.; "Energy gaps and band structure of SiGe and their temperature dependence," in Kasper, Erich, and Lyutovich, Klara, editors, Properties of Silicon Germanium and SiGe.Carbon. London: INSPEC, 2000, p. 125.
    • (2000) Properties of Silicon Germanium and SiGe.Carbon , pp. 125
    • Penn, C.1    Fromherz, T.2    Bauer, G.3
  • 87
    • 84892351302 scopus 로고    scopus 로고
    • SiGe heterojunctions and band offsets
    • Kasper, Erich, and Lyutovich, Klara, editors. London: INSPEC
    • Van der Walle, C.B.; "SiGe heterojunctions and band offsets," in Kasper, Erich, and Lyutovich, Klara, editors, Properties of Silicon Germanium and SiGe.Carbon. London: INSPEC, 2000, p. 149.
    • (2000) Properties of Silicon Germanium and SiGe.Carbon , pp. 149
    • Van Der Walle, C.B.1
  • 89
    • 84892193832 scopus 로고    scopus 로고
    • Electron and hole mobilities in Si/SiGe heterostructures
    • Kasper, Erich, and Lyutovich, Klara, editors. London: INSPEC
    • Schaffler, F.; "Electron and hole mobilities in Si/SiGe heterostructures," in Kasper, Erich, and Lyutovich, Klara, editors, Properties of Silicon Germanium and SiGe.Carbon. London: INSPEC, 2000, p. 196.
    • (2000) Properties of Silicon Germanium and SiGe.Carbon , pp. 196
    • Schaffler, F.1
  • 91
    • 84892245716 scopus 로고
    • University of Illinois
    • x. University of Illinois, 1986.
    • (1986) x
    • Shah, S.I.U.1
  • 92
    • 0031195432 scopus 로고    scopus 로고
    • OMVPE growth of metastable GaAsSb and GaInAsSb alloys using TBAs and TBDMSb
    • Shin, J, Hsu, T.C., Hsu, Y., and Stringfellow, G.B., "OMVPE growth of metastable GaAsSb and GaInAsSb alloys using TBAs and TBDMSb." Journal of Crystal Growth, 1997; 179:1-9.
    • (1997) Journal of Crystal Growth , vol.179 , pp. 1-9
    • Shin, J.1    Hsu, T.C.2    Hsu, Y.3    Stringfellow, G.B.4
  • 95
    • 0042888873 scopus 로고    scopus 로고
    • T of 452 GHz
    • Hafez, Walid; Lai, Jie-Wei; and Feng, Milton; "Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz." IEEE Electron Device Letters, 2003; 24: 436-8.
    • (2003) IEEE Electron Device Letters , vol.24 , pp. 436-438
    • Hafez, W.1    Lai, J.-W.2    Feng, M.3
  • 98
    • 0000628782 scopus 로고
    • Dislocations in heteroepitaxial films
    • ed. T.S. Moss, Materials, Properties, and Preparation, ed. S. Mahajan, North Holland, Amsterdam, Chapter 15
    • Beanland, R.; Kiely, C.J.; and Pond, R.C.; "Dislocations in heteroepitaxial films", in Handbook on Semiconductors, ed. T.S. Moss, Vol. 3A, Materials, Properties, and Preparation, ed. S. Mahajan, North Holland, Amsterdam, 1994, Chapter 15.
    • (1994) Handbook on Semiconductors , vol.3 A
    • Beanland, R.1    Kiely, C.J.2    Pond, R.C.3
  • 100
    • 3142743150 scopus 로고    scopus 로고
    • in the series Optoelectronic Properties of Semiconductors and Superlattice, ed. by Manasreh, M.O., New York: Taylor and Francis
    • Feng, Zhe Chuan and Zhao, Jian H., Silicon Carbide: Materials, Processing and Devices, v. 20 in the series Optoelectronic Properties of Semiconductors and Superlattice, ed. by Manasreh, M.O., New York: Taylor and Francis, 2004.
    • (2004) Silicon Carbide: Materials, Processing and Devices , vol.20
    • Feng, Z.C.1    Zhao, J.H.2
  • 106
    • 0002478487 scopus 로고
    • A simple man's view of the thermochemistry of semiconductors
    • ed. T.S. Moss, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, Chapter 1
    • Van Vechten, J.A., "A Simple Man's View of the Thermochemistry of Semiconductors" in Handbook on Semiconductors, ed. T.S. Moss, Vol. 3, Materials, Properties, and Preparation, ed. S.P. Keller, North Holland, Amsterdam, 1980, Chapter 1.
    • (1980) Handbook on Semiconductors , vol.3
    • Van Vechten, J.A.1
  • 108
    • 0842321767 scopus 로고    scopus 로고
    • Prediction of dopant ionization energies in silicon: The importance of strain
    • Rockett A., Johnson D.D., Khare S.V., Tuttle B.R., "Prediction of dopant ionization energies in silicon: the importance of strain." Phys. Rev. B, 2003; 68: 233208-1-4.
    • (2003) Phys. Rev. B , vol.68 , pp. 2332081-2332084
    • Rockett, A.1    Johnson, D.D.2    Khare, S.V.3    Tuttle, B.R.4
  • 109
    • 0002734525 scopus 로고
    • Concentration profiles of diffused dopants in Silicon
    • Wang, F.F.Y., ed., (North Holland, Amsterdam), chapter 7
    • Fair, Richard B, "Concentration profiles of diffused dopants in Silicon," in Wang, F.F.Y., ed., Impurity Doping Processes in Silicon (North Holland, Amsterdam, 1981), chapter 7.
    • (1981) Impurity Doping Processes in Silicon
    • Fair, R.B.1
  • 110
    • 0002478487 scopus 로고
    • A simple man's view of the thermochemistry of semiconductors
    • ed. by T.S. Moss, Materials, Properties, and Preparation ed. by S.P. Keller, North Holland, Amsterdam, (Chapter 1)
    • Van Vechten, J.A., "A simple man's view of the thermochemistry of semiconductors" in Handbook on Semiconductors, ed. by T.S. Moss, v. 3, Materials, Properties, and Preparation ed. by S.P. Keller, North Holland, Amsterdam, 1980 (Chapter 1).
    • (1980) Handbook on Semiconductors , vol.3
    • Van Vechten, J.A.1
  • 111
    • 23544459548 scopus 로고
    • Electronic structure, total energies, and abundances of the elementary point defects in GaAs
    • Baraff, G.A. and Schluter M., "Electronic structure, total energies, and abundances of the elementary point defects in GaAs." Phys. Rev. Lett., 1985; 55: 1327-30.
    • (1985) Phys. Rev. Lett. , vol.55 , pp. 1327-1330
    • Baraff, G.A.1    Schluter, M.2
  • 112
    • 36149008418 scopus 로고
    • For one of the earliest observations, see, for example, Schockley W., and Moll J.L., Phys. Rev., 1960; 119: 1480.
    • (1960) Phys. Rev. , vol.119 , pp. 1480
    • Schockley, W.1    Moll, J.L.2
  • 113
    • 0342500839 scopus 로고    scopus 로고
    • A phenomenological model for systematization and prediction of doping limits in II-VI and I-III-VI compounds
    • Zhang, S.B.; Wei, Su-Huai; and Zunger, A.; "A phenomenological model for systematization and prediction of doping limits in II-VI and I-III-VI compounds." J. Appl. Phys., 1998; 83: 3192-6.
    • (1998) J. Appl. Phys. , vol.83 , pp. 3192-3196
    • Zhang, S.B.1    Wei, S.-H.2    Zunger, A.3
  • 114
    • 0001290237 scopus 로고
    • Energetics of misfit- and threading-dislocation arrays in heteroepitaxial films
    • Rockett A., Kiely C.J., "Energetics of misfit- and threading-dislocation arrays in heteroepitaxial films." Phys. Rev. B, 1991; 44: 1154-62.
    • (1991) Phys. Rev. B , vol.44 , pp. 1154-1162
    • Rockett, A.1    Kiely, C.J.2
  • 116
    • 36149012981 scopus 로고
    • The forces exerted on dislocations and the stress fields produced by them
    • Peach M., Koehler J.S., "The forces exerted on dislocations and the stress fields produced by them." Phys. Rev. 1950; 80: 436-9.
    • (1950) Phys. Rev. , vol.80 , pp. 436-439
    • Peach, M.1    Koehler, J.S.2
  • 117
    • 0001541274 scopus 로고    scopus 로고
    • Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems
    • Johnson H.T. and Freund L.B., "Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems." J. Appl. Phys. 1997; 81: 6081-90.
    • (1997) J. Appl. Phys. , vol.81 , pp. 6081-6090
    • Johnson, H.T.1    Freund, L.B.2
  • 118
    • 6744271232 scopus 로고
    • New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in strained epitaxial layers
    • R. Hull, private communication. The reader is referred to the many excellent works by Hull and collaborators that describe the results of these observations. As an example of such work, see Hull R., and Bean J.C., "New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in strained epitaxial layers." Phys. Statu. Solidi A, 1993; 138: 533-46.
    • (1993) Phys. Statu. Solidi A , vol.138 , pp. 533-546
    • Hull, R.1    Bean, J.C.2
  • 119
    • 0000628782 scopus 로고
    • Dislocations in heteroepitaxial films
    • ed. T.S. Moss, Materials, Properties, and Preparation, ed. S. Mahajan, North Holland, Amsterdam, Chapter 15
    • Beanland, R.; Kiely, C.J.; and Pond, R.C.; "Dislocations in heteroepitaxial films", in Handbook on Semiconductors, ed. T.S. Moss, Vol. 3A, Materials, Properties, and Preparation, ed. S. Mahajan, North Holland, Amsterdam, 1994, Chapter 15.
    • (1994) Handbook on Semiconductors , vol.3 A
    • Beanland, R.1    Kiely, C.J.2    Pond, R.C.3
  • 120
    • 0028259275 scopus 로고
    • Electronic structure of semiconductor surfaces and interfaces
    • and references therein
    • Himpsel F.J., "Electronic structure of semiconductor surfaces and interfaces." Surface Science, 1994; 299/300: 525-540, and references therein.
    • (1994) Surface Science , vol.299-300 , pp. 525-540
    • Himpsel, F.J.1
  • 121
    • 0003597031 scopus 로고
    • London: INSPEC, Institution of Electrical Engineers
    • Harris, Gary L., Properties of Silicon Carbide, London: INSPEC, Institution of Electrical Engineers, 1995.
    • (1995) Properties of Silicon Carbide
    • Harris, G.L.1
  • 122
    • 3142743150 scopus 로고    scopus 로고
    • in the series Optoelectronic Properties of Semiconductors and Superlattice, ed. by Manasreh, M.O., New York: Taylor and Francis, various sections
    • Feng, Zhe Chuan and Zhao, Jian H., Silicon Carbide: Materials, Processing and Devices, v. 20 in the series Optoelectronic Properties of Semiconductors and Superlattice, ed. by Manasreh, M.O., New York: Taylor and Francis, 2004, various sections.
    • (2004) Silicon Carbide: Materials, Processing and Devices , vol.20
    • Feng, Z.C.1    Zhao, J.H.2
  • 124
    • 84892241487 scopus 로고    scopus 로고
    • retrieved from, February
    • Cree materials catalog, retrieved from www.cree.com, February 2007.
    • (2007)
  • 126
    • 84892261216 scopus 로고
    • Amorphous semiconductors
    • Berlin: Springer-Verlag
    • Brodsky Marc H., Amorphous Semiconductors in Topics in Applied Physics, volume 36. Berlin: Springer-Verlag, 1979.
    • (1979) Topics in Applied Physics , vol.36
    • Brodsky, M.H.1
  • 127
    • 0038446409 scopus 로고    scopus 로고
    • Light-induced defects in hydrogenated amorphous silicon germanium alloys
    • Cohen J. David "Light-induced defects in hydrogenated amorphous silicon germanium alloys." Solar Energy Mater. & Solar Cells 2003; 78: 399-424.
    • (2003) Solar Energy Mater. & Solar Cells , vol.78 , pp. 399-424
    • David, C.J.1
  • 128
    • 0001198467 scopus 로고
    • Properties of amorphous silicon/amorphous silicon-germanium multilayers
    • Conde J.P., Chu V., Shen D.S., Wagner, S. "Properties of amorphous silicon/amorphous silicon-germanium multilayers." J. Appl. Phys. 1994; 75: 1638-1655.
    • (1994) J. Appl. Phys. , vol.75 , pp. 1638-1655
    • Conde, J.P.1    Chu, V.2    Shen, D.S.3    Wagner, S.4
  • 130
    • 0012018647 scopus 로고
    • Electrons in non-crystalline materials
    • P.G. Le Comber and J. Mort, editors. (Academic, New York
    • N.F. Mott, "Electrons in Non-crystalline Materials", in Electronic and Structural Properties of Amorphous Semiconductors, P.G. Le Comber and J. Mort, editors. (Academic, New York, 1973), p.1.
    • (1973) Electronic and Structural Properties of Amorphous Semiconductors , pp. 1
    • Mott, N.F.1
  • 132
    • 0004025751 scopus 로고
    • Theory of electronic states in amorphous semiconductors
    • Brodsky M.H., Amorphous Semiconductors. Berlin: Springer-Verlag
    • Kramer B and Weaire D., "Theory of electronic states in amorphous semiconductors," in Brodsky M.H., Amorphous Semiconductors in Topics in Applied Physics, v. 36. Berlin: Springer-Verlag, 1979.
    • (1979) Topics in Applied Physics , vol.36
    • Kramer, B.1    Weaire, D.2
  • 133
    • 84915719728 scopus 로고
    • Doped amorphous semiconductors
    • Brodsky M.H., Amorphous Semiconductors. Berlin: Springer- Verlag
    • Lecomber, P.G. and Spear, W.E., "Doped Amorphous Semiconductors," in Brodsky M.H., Amorphous Semiconductors in Topics in Applied Physics, v. 36. Berlin: Springer- Verlag, 1979.
    • (1979) Topics in Applied Physics , vol.36
    • Lecomber, P.G.1    Spear, W.E.2
  • 134
    • 30244575050 scopus 로고
    • Optical properties of the component materials in multijunction hydrogenated amorphous silicon based solar cells
    • Guimaraes, Leopoldo, editor, Montreux, Switzerland, October. Chur, Switzerland: Harwood Academic Publisers
    • Dawson, R.M.; Li, Y.; Gunes, M.; Nag, S.; Collins, R.W.; Bennett, M.; and Wronski, C.R.; "Optical properties of the component materials in multijunction hydrogenated amorphous silicon based solar cells." Guimaraes, Leopoldo, editor, Proc. 11th European PV Solar Energy Conference and Exhibition, Montreux, Switzerland, October, 1992. Chur, Switzerland: Harwood Academic Publisers, 1993: 680-3.
    • (1992) Proc. 11th European PV Solar Energy Conference and Exhibition , pp. 680-683
    • Dawson, R.M.1    Li, Y.2    Gunes, M.3    Nag, S.4    Collins, R.W.5    Bennett, M.6    Wronski, C.R.7
  • 135
    • 21544455021 scopus 로고
    • Reversible conductivity charge in discharge-produced amorphous Si
    • Staebler, D.L. and Wronski, C.R., "Reversible conductivity charge in discharge-produced amorphous Si." Appl. Phys. Lett., 1977; 31: 292-4.
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 292-294
    • Staebler, D.L.1    Wronski, C.R.2
  • 136
    • 0002917434 scopus 로고
    • Electronic transport in amorphous semiconductors
    • Brodsky M.H., Amorphous Semiconductors. Berlin: Springer-Verlag
    • Nagles P. "Electronic transport in amorphous semiconductors," in Brodsky M.H., Amorphous Semiconductors in Topics in Applied Physics, v. 36. Berlin: Springer-Verlag, 1979.
    • (1979) Topics in Applied Physics , vol.36
    • Nagles, P.1
  • 137
    • 0014808875 scopus 로고
    • Conduction in non-crystalline systems. IV. Anderson localization in a disordered lattice
    • Mott N.F. "Conduction in non-crystalline systems. IV. Anderson localization in a disordered lattice." Phil. Mag., 1970; 22: 7-29.
    • (1970) Phil. Mag. , vol.22 , pp. 7-29
    • Mott, N.F.1
  • 138
    • 84996228926 scopus 로고
    • Conduction in non-crystalline materials. III. Localized states in a pseudogap and near extremities of conduction and valence bands
    • Mott N.F., "Conduction in non-crystalline materials. III. Localized states in a pseudogap and near extremities of conduction and valence bands." Phil. Mag., 1969; 19:835-52.
    • (1969) Phil. Mag. , vol.19 , pp. 835-852
    • Mott, N.F.1
  • 141
    • 36449001601 scopus 로고
    • Electronic mobility gap structure in deep defects in amorphous silicon-germanium alloys
    • Unold T., Cohen J.D., and Fortman C.M. "Electronic mobility gap structure in deep defects in amorphous silicon-germanium alloys." Appl. Phys. Lett., 1994; 64: 1714-6.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1714-1716
    • Unold, T.1    Cohen, J.D.2    Fortman, C.M.3
  • 142
    • 0343256061 scopus 로고
    • Growth and structure of microcrystalline silicon by reactive DC magnetron sputtering
    • Thompson, M.J.; Hamakawa, Y.; LeComber, P.G.; Madan, A.; Schiff, E.A., editors, Proc. Mater. Res. Soc., Pittsburgh, Pennsylvania: Materials Research Society
    • Feng G., Kaytyar M., Yang Y.H., Abelson J.R., Maley N., "Growth and structure of microcrystalline silicon by reactive DC magnetron sputtering." Thompson, M.J.; Hamakawa, Y.; LeComber, P.G.; Madan, A.; Schiff, E.A., editors, Amorphous Silicon Technology - 1992, Proc. Mater. Res. Soc., v. 258, Pittsburgh, Pennsylvania: Materials Research Society, 1992: 179-84.
    • (1992) Amorphous Silicon Technology - 1992 , vol.258 , pp. 179-184
    • Feng, G.1    Kaytyar, M.2    Yang, Y.H.3    Abelson, J.R.4    Maley, N.5
  • 143
    • 0021558454 scopus 로고
    • The optical absorption edge of a-Si:H
    • Willardson R.K., and Beer, Albert C., : Hydrogenated Amorphous Silicon, Part B: Optical Properties, Jacques I Pankove, ed. New York: Academic Press
    • Based on data from Cody, G.L. "The optical absorption edge of a-Si:H" in Willardson R.K., and Beer, Albert C., Semiconductors and Semimetals, v. 21: Hydrogenated Amorphous Silicon, Part B: Optical Properties, Jacques I Pankove, ed. New York: Academic Press, 1984.
    • (1984) Semiconductors and Semimetals , vol.21
    • Cody, G.L.1
  • 144
    • 0001385959 scopus 로고
    • Optical properties of amorphous semiconductors
    • Brodsky M.H., Amorphous Semiconductors. Berlin: Springer-Verlag
    • Connell, G.A.N. "Optical properties of amorphous semiconductors" in Brodsky M.H., Amorphous Semiconductors in Topics in Applied Physics, v. 36. Berlin: Springer-Verlag, 1979.
    • (1979) Topics in Applied Physics , vol.36
    • Connell, G.A.N.1
  • 145
    • 0021374872 scopus 로고
    • Optical constants of a hydrogenated amorphous carbon film
    • Smith F.W., "Optical constants of a hydrogenated amorphous carbon film." J. Appl. Phys., 1984; 55: 764-71.
    • (1984) J. Appl. Phys. , vol.55 , pp. 764-771
    • Smith, F.W.1
  • 146
    • 36449001601 scopus 로고
    • Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys
    • Unold, D.; Cohen, J.D.; and Fortmann, C.M. "Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys", Appl. Phys. Lett., 1994; 64: 1714-6.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1714-1716
    • Unold, D.1    Cohen, J.D.2    Fortmann, C.M.3
  • 147
    • 84913898768 scopus 로고
    • x:H:F
    • Madan, A.; Thompson, M.; Adler, D.; and Harnakawa, Y., editors. Materials Research Society Symposium Proceedings
    • MacKenzie, D.W. and Paul, W., "Comparison of properties of a-Si1-xGex:H and a-Si1-xGex:H:F" in Madan, A.; Thompson, M.; Adler, D.; and Harnakawa, Y., editors, Amorphous Silicon Semiconductors - Pure and Hydrogenated. Materials Research Society Symposium Proceedings 1987; 95: 281-92.
    • (1987) Amorphous Silicon Semiconductors - Pure and Hydrogenated , vol.95 , pp. 281-292
    • MacKenzie, D.W.1    Paul, W.2
  • 148
    • 0001198467 scopus 로고
    • Properties of amorphous silicon/ armorphous silicon-germanium multilayers
    • Conde, J.P.; Chu, V.; Shen, D.S.; Wagner, S., "Properties of amorphous silicon/ armorphous silicon-germanium multilayers." J. Appl. Phys., 1994; 75: 1638-55.
    • (1994) J. Appl. Phys. , vol.75 , pp. 1638-1655
    • Conde, J.P.1    Chu, V.2    Shen, D.S.3    Wagner, S.4
  • 149
    • 0024888643 scopus 로고
    • The physics of amorphous-silicon thin-film transistors
    • Powell, M.J. "The physics of amorphous-silicon thin-film transistors." IEEE Trans. on Electronic Devices 1989; 36: 2753-63.
    • (1989) IEEE Trans. on Electronic Devices , vol.36 , pp. 2753-2763
    • Powell, M.J.1
  • 150
    • 0032046958 scopus 로고    scopus 로고
    • Large area electronics, applications and requirements
    • Street, R.A. "Large area electronics, applications and requirements." Phys. Statu Solidi a 1998; 166: 695-705.
    • (1998) Phys. Statu Solidi A , vol.166 , pp. 695-705
    • Street, R.A.1
  • 151
    • 36549090980 scopus 로고
    • Range of validity of the surfacephotovoltage diffusion length measurement: A computer simulation
    • McElheny, P.; Arch, J.; Lin, H.; and Fonash, S. "Range of validity of the surfacephotovoltage diffusion length measurement: a computer simulation." J. Appl. Phys., 1988; 64: 1254:65
    • (1988) J. Appl. Phys. , vol.64 , Issue.1254 , pp. 65
    • McElheny, P.1    Arch, J.2    Lin, H.3    Fonash, S.4
  • 152
    • 0032651732 scopus 로고    scopus 로고
    • Computer simulation for solar cell applications: Understanding and design
    • and references therein, Schropp, R. et al. editors, Proc. Mater. Res. Soc., Pittsburgh, Pennsylvania: Materials Research Society
    • and Zhu, H. and Fonash, S.J. "Computer simulation for solar cell applications: understanding and design" and references therein. Amorphous and Microcrystalline Silicon Technology-1998 Schropp, R. et al. editors, Proc. Mater. Res. Soc., v. 507, Pittsburgh, Pennsylvania: Materials Research Society, 1998: 395-402.
    • (1998) Amorphous and Microcrystalline Silicon Technology-1998 , vol.507 , pp. 395-402
    • Zhu, H.1    Fonash, S.J.2
  • 154
    • 84892288612 scopus 로고    scopus 로고
    • Any of various articles in a special issue of
    • Any of various articles in a special issue of Accounts of Chemical Research, 1999; 32.
    • (1999) Accounts of Chemical Research , pp. 32
  • 155
    • 33746018236 scopus 로고
    • Kinetics of charged excitations in conjugated polymers - An example for the application of picosecond- and femtosecond spectroscopy
    • Z. Gerbi, ed. Amsterdam: North Holland, and other articles in the same source
    • H. Bleier, "Kinetics of charged excitations in conjugated polymers - an example for the application of picosecond- and femtosecond spectroscopy," in Organic Materials for Photonics: Science and Technology, Z. Gerbi, ed. Amsterdam: North Holland, 1993: 77-102, and other articles in the same source.
    • (1993) Organic Materials for Photonics: Science and Technology , pp. 77-102
    • Bleier, H.1
  • 157
    • 0037104802 scopus 로고    scopus 로고
    • Intramolecular charge transport along isolated chains of conjugated polymers: Effect of torsional disorder and polymerization defects
    • Ferdinand C. Grozema, Piet Th. van Duijnen, Yuri A. Berlin, Mark A. Ratner, and Laurens D. A. Siebbeles, "Intramolecular Charge Transport along Isolated Chains of Conjugated Polymers: Effect of Torsional Disorder and Polymerization Defects." J. Phys. Chem. B 2002; 106(32): 7791-5.
    • (2002) J. Phys. Chem. B , vol.106 , Issue.32 , pp. 7791-7795
    • Grozema, F.C.1    Duijnen Van, P.Th.2    Berlin, Y.A.3    Ratner, M.A.4    Siebbeles, L.D.A.5
  • 158
    • 12444270061 scopus 로고    scopus 로고
    • Recent progress in soft lithography
    • J.A. Rogers and R. G. Nuzzo, "Recent progress in soft lithography", Materials Today, 2005; 8: 50-6.
    • (2005) Materials Today , vol.8 , pp. 50-56
    • Rogers, J.A.1    Nuzzo, R.G.2
  • 159
    • 0038743397 scopus 로고    scopus 로고
    • Excited-state electronic structure of conjugated oligomers and polymers: A quantum-chemical approach to optical phenomena
    • Brédas, Jean-Luc; Cornil, Jérôme; Beljonne, David; Dos Santos, Donizetti A; and Shuai, Zhigang; "Excited-state electronic structure of conjugated oligomers and polymers: a quantum-chemical approach to optical phenomena". Accounts in Chemical Research 1999; 32: 267-276.
    • (1999) Accounts in Chemical Research , vol.32 , pp. 267-276
    • Brédas, J.-L.1    Cornil, J.2    Beljonne, D.3    Dos Santos, D.A.4    Shuai, Z.5
  • 160
    • 0031069547 scopus 로고    scopus 로고
    • Towards a coherent description of the nature of the photogenerated species in the lowest-lying one-photon allowed excited state of isolated conjugated chains
    • Cornil, J.; Beljonne, D.; Brédas, J.L.; "Towards a coherent description of the nature of the photogenerated species in the lowest-lying one-photon allowed excited state of isolated conjugated chains." Synthetic Metals 1997; 85: 1029-1030.
    • (1997) Synthetic Metals , vol.85 , pp. 1029-1030
    • Cornil, J.1    Beljonne, D.2    Brédas, J.L.3
  • 164
    • 0032511040 scopus 로고    scopus 로고
    • Integrated optoelectronic devices based on conjugated polymers
    • Sirringhaus, H.; Friend, Richard H.; "Integrated optoelectronic devices based on conjugated polymers." Science 1998; 280: 1741-4.
    • (1998) Science , vol.280 , pp. 1741-1744
    • Sirringhaus, H.1    Friend, R.H.2
  • 166
    • 0033525158 scopus 로고    scopus 로고
    • Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators
    • Dimitrakopoulos, C.; Purushothaman, S.; Kymissis, J.; Callegari, A.; and Shaw, J.M.; "Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators." Science 1999; 283: 822-4.
    • (1999) Science , vol.283 , pp. 822-824
    • Dimitrakopoulos, C.1    Purushothaman, S.2    Kymissis, J.3    Callegari, A.4    Shaw, J.M.5
  • 167
    • 0000913934 scopus 로고    scopus 로고
    • Effect of charging on electronic structure of the Alq3 molecule: The identification of carrier transport properties
    • Zhang, R.Q. and Lee, S.T.; "Effect of charging on electronic structure of the Alq3 molecule: the identification of carrier transport properties." Chem. Phys. Lett. 2000; 326: 413-20.
    • (2000) Chem. Phys. Lett. , vol.326 , pp. 413-420
    • Zhang, R.Q.1    Lee, S.T.2
  • 168
    • 0033330527 scopus 로고    scopus 로고
    • A blue organic light emitting diode
    • See for example, Kijima, Yasunori; Asai, Nobutoshi; and Tamura, Shin-ichiro; "A blue organic light emitting diode." Jpn. J. Appl. Phys. 1999; 38: 5274-77.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 5274-5277
    • Kijima, Y.1    Asai, N.2    Tamura, S.-I.3
  • 170
    • 36449005929 scopus 로고
    • Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes
    • Adachi, C.; Nagai, K.; and Tamoto, N.; "Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes." Appl. Phys. Lett. 1995; 66: 2679-81.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 2679-2681
    • Adachi, C.1    Nagai, K.2    Tamoto, N.3
  • 171
    • 0035929012 scopus 로고    scopus 로고
    • A relationship between driving voltage and the highest occupied molecular orbital level of hole-transporting metallophthalocyanine layer for organic electroluminescence devices
    • Zhu, L.; Tang, H.; Harima, Y.; Kunugi, Y.; Yamashita, K.; Ohshita, J.; Kunai, A.; "A relationship between driving voltage and the highest occupied molecular orbital level of hole-transporting metallophthalocyanine layer for organic electroluminescence devices." Thin Solid Films, 2001; 396: 213-8.
    • (2001) Thin Solid Films , vol.396 , pp. 213-218
    • Zhu, L.1    Tang, H.2    Harima, Y.3    Kunugi, Y.4    Yamashita, K.5    Ohshita, J.6    Kunai, A.7
  • 172
    • 0034724129 scopus 로고    scopus 로고
    • Applications of phthalocyanines in organic light emitting devices
    • D. Hohnholz, S. Steinbrecher, M. Hanack, "Applications of phthalocyanines in organic light emitting devices." J. Mol. Struct., 2000; 521: 231-7.
    • (2000) J. Mol. Struct. , vol.521 , pp. 231-237
    • Hohnholz, D.1    Steinbrecher, S.2    Hanack, M.3
  • 173
    • 1942466137 scopus 로고    scopus 로고
    • Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host
    • Adachi, Chihaya; Baldo, Marc A.; and Forrest, Stephen R.; "Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host." J. Appl. Phys., 2000; 87: 8049-55.
    • (2000) J. Appl. Phys. , vol.87 , pp. 8049-8055
    • Adachi, C.1    Baldo, M.A.2    Forrest, S.R.3
  • 174
  • 175
    • 0031212879 scopus 로고    scopus 로고
    • Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar carrier transport abilities
    • Wu, C.; Sturm, J.C.; Register, R.A.; Tian, J.; Dana, E.P.; and Thompson, M.E.; "Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar carrier transport abilities." IEEE Trans. on Electron Dev. 1997; 44: 1269-81.
    • (1997) IEEE Trans. on Electron Dev. , vol.44 , pp. 1269-1281
    • Wu, C.1    Sturm, J.C.2    Register, R.A.3    Tian, J.4    Dana, E.P.5    Thompson, M.E.6
  • 177
    • 2442587575 scopus 로고    scopus 로고
    • Development of OLED with high stability and luminescence efficiency by co-doping methods for full color displays
    • Kanno, Hiroshi; Hamada, Yuji; Takahashi, Hisakazu; "Development of OLED with high stability and luminescence efficiency by co-doping methods for full color displays." IEEE J. on Selected Topics in Quantum Electronics 2004; 10: 30-36.
    • (2004) IEEE J. on Selected Topics in Quantum Electronics , vol.10 , pp. 30-36
    • Kanno, H.1    Hamada, Y.2    Takahashi, H.3
  • 178
    • 0034677475 scopus 로고    scopus 로고
    • High-efficiency fluorescent organic light-emitting devices using a phosphorescent sensitizer
    • Baldo, M.A.; Thompson, M.E.; and Forrest, S.R.; "High-efficiency fluorescent organic light-emitting devices using a phosphorescent sensitizer." Nature 2000; 403: 750-753.
    • (2000) Nature , vol.403 , pp. 750-753
    • Baldo, M.A.1    Thompson, M.E.2    Forrest, S.R.3
  • 181
    • 0006122632 scopus 로고
    • Electronic structure of polyelectronic paraphenylene vinylene copolymers: The relationship to light-emitting characteristics
    • d os Santos, D.A.; Quattrocchi, C.; Friend, R.H.; Brédas, J.L.; "Electronic structure of polyelectronic paraphenylene vinylene copolymers: the relationship to light-emitting characteristics." J. Chem. Phys. 1994; 100: 3301-6.
    • (1994) J. Chem. Phys. , vol.100 , pp. 3301-3306
    • Dos Santos, D.A.1    Quattrocchi, C.2    Friend, R.H.3    Brédas, J.L.4
  • 182
    • 0027678070 scopus 로고
    • Efficient light-emitting diodes based on polymers with high electron affinities
    • Greenham, N.C.; Moratti, S.C.; Bradley, D.D.C.; Friend, R.H.; and Holmes, A.B.; "Efficient light-emitting diodes based on polymers with high electron affinities." Nature, 1993; 365: 628-30.
    • (1993) Nature , vol.365 , pp. 628-630
    • Greenham, N.C.1    Moratti, S.C.2    Bradley, D.D.C.3    Friend, R.H.4    Holmes, A.B.5
  • 183
    • 0032933949 scopus 로고    scopus 로고
    • A model oligomer approach to light-emitting semiconducting polymers
    • Van Hutten, P.F.; Krasnikov, V.V.; and Hadziioannou, G.; "A model oligomer approach to light-emitting semiconducting polymers." Acc. Chem. Res. 1999; 32: 257-65.
    • (1999) Acc. Chem. Res. , vol.32 , pp. 257-265
    • Van Hutten, P.F.1    Krasnikov, V.V.2    Hadziioannou, G.3
  • 184
    • 0032909927 scopus 로고    scopus 로고
    • Fundamentals in the design of molecular electronic devices: Long range charge carrier transport and electronic coupling
    • Fox, M.A.; "Fundamentals in the design of molecular electronic devices: long range charge carrier transport and electronic coupling." Acc. Chem. Res. 2999; 32: 201-7.
    • Acc. Chem. Res. , vol.2999 , Issue.32 , pp. 201-207
    • Fox, M.A.1
  • 186
    • 0000221646 scopus 로고    scopus 로고
    • Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contacts
    • Campbell, A.J.; Bradley, D.D.C.; Antoniadis, H.; Inbasekaran, M.; Wu, W. W.; and Woo, E.P.; "Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contacts." Appl. Phys. Lett. 2000; 76: 1734-6.
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 1734-1736
    • Campbell, A.J.1    Bradley, D.D.C.2    Antoniadis, H.3    Inbasekaran, M.4    Wu, W.W.5    Woo, E.P.6
  • 187
    • 0001027075 scopus 로고    scopus 로고
    • Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility
    • Bao, Z.; Dodabalapur, A.; and Lovinger, A.J.; "Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility." Appl. Phys. Lett. 1996; 69: 4108-10.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 4108-4110
    • Bao, Z.1    Dodabalapur, A.2    Lovinger, A.J.3
  • 189
    • 0031289634 scopus 로고    scopus 로고
    • Polymer electroluminescent devices with zirconium carbide cathodes
    • Sheats, J.R.; Mackie, W.A.; Anz, S.; and Xie, T.; "Polymer electroluminescent devices with zirconium carbide cathodes." Proc. SPIE, 1997; 1348: 219-27.
    • (1997) Proc. SPIE , vol.1348 , pp. 219-227
    • Sheats, J.R.1    MacKie, W.A.2    Anz, S.3    Xie, T.4
  • 190
    • 0012535484 scopus 로고    scopus 로고
    • The role of interface states in controlling the electronic structure of Alq/ reactive metal contacts
    • For details, see Shen, C. and Kahn, A., "The role of interface states in controlling the electronic structure of Alq/ reactive metal contacts." Organic Electronics, 2001; 2: 89-95.
    • (2001) Organic Electronics , vol.2 , pp. 89-95
    • Shen, C.1    Kahn, A.2
  • 192
    • 0001314740 scopus 로고    scopus 로고
    • Multicolor organic light-emitting diodes processed by hybrid inkjet printing
    • Shun-Chi Chang, Jie Liu, J. Bharathan, Yang Yang, J. Onohara, and J. Kido, "Multicolor organic light-emitting diodes processed by hybrid inkjet printing" in Advanced Materials, 1999; 11: 734-7.
    • (1999) Advanced Materials , vol.11 , pp. 734-737
    • Chang, S.-C.1    Liu, J.2    Bharathan, J.3    Yang, Y.4    Onohara, J.5    Kido, J.6
  • 193
    • 0032001961 scopus 로고    scopus 로고
    • Microfabrication of conducting polymer devices by ink-jet stereolithography
    • Pede, D.; Serra, G.; and De Rossi, D; "Microfabrication of conducting polymer devices by ink-jet stereolithography" in Materials Science and Engineering C, 1998; 5: 289-91.
    • (1998) Materials Science and Engineering C , vol.5 , pp. 289-291
    • Pede, D.1    Serra, G.2    De Rossi, D.3
  • 197
    • 84892235481 scopus 로고
    • New York: Academic Press
    • Matthews, John Wauchope, editor, Eptiaxial Growth. New York: Academic Press, 1975.
    • (1975) Eptiaxial Growth
    • Matthews, J.W.1
  • 200
    • 0028196463 scopus 로고
    • Atomic processes in crystal growth
    • Venables, John A. "Atomic processes in crystal growth." Surface Science 1994; 299/300: 798-817.
    • (1994) Surface Science , vol.299-300 , pp. 798-817
    • Venables, J.A.1
  • 201
    • 0003752338 scopus 로고
    • New York: Cambridge University Press
    • Zangwill, Andrew Physics at Surfaces. New York: Cambridge University Press, 1988.
    • (1988) Physics at Surfaces
    • Zangwill, A.1
  • 203
    • 0343078495 scopus 로고
    • Implications of the configuration-dependent reactive incorporation growth process for the group v pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensity
    • Madhukar, A. and Ghaisas, S.V. "Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensity." Appl. Phys. Lett. 1985; 47: 247-9.
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 247-249
    • Madhukar, A.1    Ghaisas, S.V.2
  • 204
    • 84948891734 scopus 로고
    • 4 using low-energy (≤300 eV) accelerated beams in ultrahigh vacuum
    • Hasan, M.-A.; Barnett, S.A.; Sundgren, J.-E.; Greene, J.E. "Nucleation and initial growth of In deposited on Si3N4 using low-energy (≤300 eV) accelerated beams in ultrahigh vacuum." J. Vac. Sci. Technol. A 1987; 5: 1883-7.
    • (1987) J. Vac. Sci. Technol. A , vol.5 , pp. 1883-1887
    • Hasan, M.-A.1    Barnett, S.A.2    Sundgren, J.-E.3    Greene, J.E.4
  • 205
    • 0029484622 scopus 로고
    • Binding and diffusion of a Si adatom around type B steps on Si (001) c(4*2)
    • Jun Wang; Drabold, D.A.; and Rockett, A. "Binding and diffusion of a Si adatom around type B steps on Si (001) c(4*2)." Surf. Sci. 1995; 344: 251-7.
    • (1995) Surf. Sci. , vol.344 , pp. 251-257
    • Wang, J.1    Drabold, D.A.2    Rockett, A.3
  • 206
    • 36849110552 scopus 로고
    • Atomic view of surface self-diffusion - Tungsten on tungsten
    • Ehrlich, G. and Hudda, F.G., "Atomic view of surface self-diffusion - tungsten on tungsten" J. Chem. Phys. 1966; 44: 1039-40.
    • (1966) J. Chem. Phys. , vol.44 , pp. 1039-1040
    • Ehrlich, G.1    Hudda, F.G.2
  • 207
    • 36749047341 scopus 로고
    • Step motion on crystal surfaces
    • Schwoebel, R.L. and Shipsey, E.J. "Step motion on crystal surfaces." J. Appl. Phys. 1966; 37: 3682-6.
    • (1966) J. Appl. Phys. , vol.37 , pp. 3682-3686
    • Schwoebel, R.L.1    Shipsey, E.J.2
  • 208
    • 0039465131 scopus 로고
    • Dimer-chain model for the 7*7 and 2*8 reconstructed surfaces of Si (111) and Ge (111)
    • Takayanagi, K.; Tanishiro, Y. "Dimer-chain model for the 7*7 and 2*8 reconstructed surfaces of Si (111) and Ge (111)." Phys. Rev. B 1986; 34: 1034-40.
    • (1986) Phys. Rev. B , vol.34 , pp. 1034-1040
    • Takayanagi, K.1    Tanishiro, Y.2
  • 211
    • 0003565309 scopus 로고
    • ed. by. Seitz, F. and Turnbull, D. (Academic Press, New York)
    • Eshelby, J.D., Solid State Physics, ed. by. Seitz, F. and Turnbull, D. (Academic Press, New York: 1956) v. 3.
    • (1956) Solid State Physics , vol.3
    • Eshelby, J.D.1
  • 212
    • 0023362577 scopus 로고
    • Models of thin film growth modes
    • Gilmer, G.H. and Grabow, M.H.; "Models of thin film growth modes." J. of Metals, 1987: 39: 19-23.
    • (1987) J. of Metals , vol.39 , pp. 19-23
    • Gilmer, G.H.1    Grabow, M.H.2
  • 213
    • 0001614731 scopus 로고
    • Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si (100)2×1
    • Sakurai, Toshio and Hagstrum, Homer D.; "Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si (100)2×1." Phys. Rev. B 1976; 14: 1593-6.
    • (1976) Phys. Rev. B , vol.14 , pp. 1593-1596
    • Sakurai, T.1    Hagstrum, H.D.2
  • 215
    • 84892354819 scopus 로고    scopus 로고
    • Thesis, PH.D. University of Illinois at Urbana-Champaign
    • Kim, Hyungjun; "H-mediated film growth and dopant incorporation kinetics during Si1-xGex(100):B gas-source molecular beam epitaxy." Thesis, PH.D. University of Illinois at Urbana-Champaign, 1998.
    • (1998) x(100):B Gas-source Molecular Beam Epitaxy
    • Kim, H.1
  • 217
  • 218
    • 0005306237 scopus 로고
    • Molecular beam epitaxy
    • Joyce, B.A.; "Molecular beam epitaxy." Rep. Prog. Phys. 1985; 48: 1637-97.
    • (1985) Rep. Prog. Phys. , vol.48 , pp. 1637-1697
    • Joyce, B.A.1
  • 219
    • 0026413211 scopus 로고
    • Modulated molecular beam study of group III desorption during growth by MBE
    • Zhang, J.; Gibson, E.M.; Foxon, C.T.; and Joyce, B.A.; "Modulated molecular beam study of group III desorption during growth by MBE." J. Cryst. Growth 1991; 111; 93-97.
    • (1991) J. Cryst. Growth , vol.111 , pp. 93-97
    • Zhang, J.1    Gibson, E.M.2    Foxon, C.T.3    Joyce, B.A.4
  • 220
    • 0032622111 scopus 로고    scopus 로고
    • An ion-beam technique for measuring surface diffusion coefficients
    • DeLuca, P.M.; Labanda, J.G.C.; and Barnett, S.A.; "An ion-beam technique for measuring surface diffusion coefficients." Appl. Phys. Letters 1999: 74: 1719-21.
    • (1999) Appl. Phys. Letters , vol.74 , pp. 1719-1721
    • Deluca, P.M.1    Labanda, J.G.C.2    Barnett, S.A.3
  • 221
    • 0037042001 scopus 로고    scopus 로고
    • Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs (001)
    • Kangawa, Y.; Tto, T.; Taguchi, A.; Shiraishi, K.; 1risawa, T.; and Ohachi, T.; "Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs (001)". Appl. Surf. Sci. 2002; 190: 517-520.
    • (2002) Appl. Surf. Sci. , vol.190 , pp. 517-520
    • Kangawa, Y.1    Tto, T.2    Taguchi, A.3    Shiraishi, K.4    Irisawa, T.5    Ohachi, T.6
  • 222
    • 42749103831 scopus 로고    scopus 로고
    • Non-Ostwald coarsening of the GaAs (001) surface
    • Braun, Wolfgang; Kaganer, Vladimir M.; Jenichen, Bernd; and Ploog, Klaus H.; "Non-Ostwald coarsening of the GaAs (001) surface." Phys. Rev. B 2004; 69: 165405-7.
    • (2004) Phys. Rev. B , vol.69 , pp. 165405-165407
    • Braun, W.1    Kaganer, V.M.2    Jenichen, B.3    Ploog, K.H.4
  • 226
    • 0003945508 scopus 로고
    • New York, Academic Press: (two volumes)
    • Matthews, J.W., Epitaxial Growth. New York, Academic Press: 1975 (two volumes).
    • (1975) Epitaxial Growth
    • Matthews, J.W.1
  • 230
    • 0347848349 scopus 로고
    • Gas flow patterns at entrance and exit of cylindrical tubes
    • ed. by E.S. Perry and J.H. Durant, Oxford: Pergamon
    • Dayton, B.B., "Gas flow patterns at entrance and exit of cylindrical tubes." In 1956 National Symposium on Vacuum Technology Trans., ed. by E.S. Perry and J.H. Durant, Oxford: Pergamon; 1957: 5.
    • (1957) 1956 National Symposium on Vacuum Technology Trans. , pp. 5
    • Dayton, B.B.1
  • 232
    • 0023385157 scopus 로고
    • Calculations of molecular beam flux from liquid source
    • Yamashita, T.; Tomita, T.; and Sakurai, T.; Calculations of molecular beam flux from liquid source." Jpn. J. Appl. Phys, 1987; 26: 1192-1193.
    • (1987) Jpn. J. Appl. Phys , vol.26 , pp. 1192-1193
    • Yamashita, T.1    Tomita, T.2    Sakurai, T.3
  • 233
    • 0001626398 scopus 로고
    • Vapor pressure data for the more common elements
    • Hoing, R.E., "Vapor pressure data for the more common elements." RCA Review, 1957; 18: 195-204.
    • (1957) RCA Review , vol.18 , pp. 195-204
    • Hoing, R.E.1
  • 234
    • 0012441172 scopus 로고
    • Vapor pressure data for some common gases
    • Hoing, R.E. and Hook, H.O., "Vapor pressure data for some common gases." RCA Review, 1960; 21: 360-368.
    • (1960) RCA Review , vol.21 , pp. 360-368
    • Hoing, R.E.1    Hook, H.O.2
  • 235
    • 0001202361 scopus 로고
    • Vapor pressure data for the solid and liquid elements
    • Hoing, R.E., "Vapor pressure data for the solid and liquid elements." RCA Review, 1962; 23: 567-586.
    • (1962) RCA Review , vol.23 , pp. 567-586
    • Hoing, R.E.1
  • 236
    • 0000436987 scopus 로고
    • Vapor pressure data for the solid and liquid elements
    • Hoing, R.E. and Kramer, D.A., "Vapor pressure data for the solid and liquid elements." RCA Review, 1969; 30: 285-305.
    • (1969) RCA Review , vol.30 , pp. 285-305
    • Hoing, R.E.1    Kramer, D.A.2
  • 238
    • 3643090763 scopus 로고
    • Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets
    • Sigmund, Peter, "Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets." Phys. Rev., 1969; 184: 383-416.
    • (1969) Phys. Rev. , vol.184 , pp. 383-416
    • Sigmund, P.1
  • 239
    • 36149019570 scopus 로고
    • Energy dissipation by ions in the keV region
    • Lindhard, J. "Energy dissipation by ions in the keV region." Phys. Rev., 1961; 124: 128- 130
    • (1961) Phys. Rev. , vol.124 , pp. 128-130
    • Lindhard, J.1
  • 242
    • 0001050803 scopus 로고
    • A universal relation for the sputtering yield of monatomic solids at normal ion incidence
    • Bohdansky, J., "A universal relation for the sputtering yield of monatomic solids at normal ion incidence." Nucl. Inst. and Meth. in Phys. Res. B, 1984; 2: 587-591.
    • (1984) Nucl. Inst. and Meth. in Phys. Res. B , vol.2 , pp. 587-591
    • Bohdansky, J.1
  • 245
    • 0016569164 scopus 로고
    • Sputtering - A review of some recent experimental and theoretical aspects
    • Oechsner, H., "Sputtering - a review of some recent experimental and theoretical aspects." Applied Physics A: Materials Science and Processing, 1975; 3: 185-196.
    • (1975) Applied Physics A: Materials Science and Processing , vol.3 , pp. 185-196
    • Oechsner, H.1
  • 247
    • 0002915776 scopus 로고    scopus 로고
    • Design issues in ionized metal physical vapor deposition of copper
    • Grapperhaus, M.J.; Krivokapic, Z.; and Kushner, M.J., "Design issues in ionized metal physical vapor deposition of copper." J. Appl. Phys., 1998; 83: 35-43.
    • (1998) J. Appl. Phys. , vol.83 , pp. 35-43
    • Grapperhaus, M.J.1    Krivokapic, Z.2    Kushner, M.J.3
  • 249
    • 84892315434 scopus 로고    scopus 로고
    • Ray, M.A. and Greene, J.E., unpublished
    • Ray, M.A. and Greene, J.E., unpublished.
  • 250
    • 0000042468 scopus 로고
    • The ionic entrapment and thermal desorption of inert gases in tungsten for kinetic energies of 40 eV to 5keV
    • Kornelsen, E.V., "The ionic entrapment and thermal desorption of inert gases in tungsten for kinetic energies of 40 eV to 5keV." Can. J. Phys., 1964; 42: 364-381.
    • (1964) Can. J. Phys. , vol.42 , pp. 364-381
    • Kornelsen, E.V.1
  • 251
    • 0018986588 scopus 로고
    • Internal stresses in amorphous silicon films deposited by cylindrical magnetron sputtering using Ne, Ar, Kr, Xe, and Ar+H
    • Thornton, J.A. and Hoffman, D.W., "Internal stresses in amorphous silicon films deposited by cylindrical magnetron sputtering using Ne, Ar, Kr, Xe, and Ar+H." J. Vac. Sci. Technol., 1981; 18: 203-207.
    • (1981) J. Vac. Sci. Technol. , vol.18 , pp. 203-207
    • Thornton, J.A.1    Hoffman, D.W.2
  • 252
    • 0018334139 scopus 로고
    • Compressive stress and inert gas in Mo films sputtered from a cylindrical-post magnetron with Ne, Ar, Kr, and Xe
    • Hoffman, D.W. and Thornton, J.A., "Compressive stress and inert gas in Mo films sputtered from a cylindrical-post magnetron with Ne, Ar, Kr, and Xe." J. Vac. Sci. Technol., 1980; 17: 380-383.
    • (1980) J. Vac. Sci. Technol. , vol.17 , pp. 380-383
    • Hoffman, D.W.1    Thornton, J.A.2
  • 253
    • 0012720886 scopus 로고
    • Cylindrical magentron sputtering
    • Vossen, John L. and Kern, Werner. New York, Academic
    • Thornton, John A. and Penfold, Alan S., "Cylindrical Magentron Sputtering" in Vossen, John L. and Kern, Werner, Thin Film Processes volumes I and II. New York, Academic: 1978; pp. 75-113.
    • (1978) Thin Film Processes , vol.1-2 , pp. 75-113
    • Thornton, J.A.1    Penfold, A.S.2
  • 255
    • 0006769929 scopus 로고    scopus 로고
    • Enhanced cluster mobilities on Pt(111) during film growth from the vapor phase
    • Chirita, V.; Münger, E.P.; Sundgren J.-E.; Greene, J.E., "Enhanced cluster mobilities on Pt(111) during film growth from the vapor phase." Appl. Phys. Lett., 1998; 72: 127-129.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 127-129
    • Chirita, V.1    Münger, E.P.2    Sundgren, J.-E.3    Greene, J.E.4
  • 257
    • 84892245716 scopus 로고
    • Thesis, Ph.D. - University of Illinois at Urbana-Champaign
    • Shah, Syed Ismat Ullah, "Crystal growth, atomic ordering, phase transitions in pseudobinary constituents of the metastable quaternary (GaSb)1-x(Ge2(1-y)Sn2y)x." Thesis, Ph.D. - University of Illinois at Urbana-Champaign, 1986.
    • (1986) x
    • Shah, S.I.U.1
  • 258
    • 0028368114 scopus 로고
    • 2 for improved adhesion in photovoltaic devices
    • L. Chung Yang and A. Rockett, "Cu-Mo Contacts to CuInSe2 For Improved Adhesion in Photovoltaic Devices," J. Appl. Phys 75(2), 1185 (1994).
    • (1994) J. Appl. Phys , vol.75 , Issue.2 , pp. 1185
    • Chung Yang, L.1    Rockett, A.2
  • 259
    • 0002950632 scopus 로고
    • Evolution of microstructure in nanocrystalline Mo-Cu thin films during thermal annealing
    • G. Ramanath, H. Z. Xiao, L. C. Yang, A. Rockett, and L. H. Allen, "Evolution of Microstructure in Nanocrystalline Mo-Cu Thin Films During Thermal Annealing", J. Appl. Phys. 78(4), 2435 (1995).
    • (1995) J. Appl. Phys. , vol.78 , Issue.4 , pp. 2435
    • Ramanath, G.1    Xiao, H.Z.2    Yang, L.C.3    Rockett, A.4    Allen, L.H.5
  • 263
    • 0030259142 scopus 로고    scopus 로고
    • Reaction kinetics and transport phenomena underlying the low-pressure metalorganic chemical vapor deposition of GaAs
    • Ingle, N.K.; Theodoropoulos, C.; Mountziaris, T.J.; Wexler, R.M.; and Smith, F.T.J., "Reaction kinetics and transport phenomena underlying the low-pressure metalorganic chemical vapor deposition of GaAs." J. Cryst. Growth, 1996; 167: 543-556.
    • (1996) J. Cryst. Growth , vol.167 , pp. 543-556
    • Ingle, N.K.1    Theodoropoulos, C.2    Mountziaris, T.J.3    Wexler, R.M.4    Smith, F.T.J.5
  • 264
    • 0031272059 scopus 로고    scopus 로고
    • Metalorganic chemical vapor deposition for optoelectronic devices
    • Coleman, James J., "Metalorganic chemical vapor deposition for optoelectronic devices." Proc. IEEE, 1997; 85: 1715-1729.
    • (1997) Proc. IEEE , vol.85 , pp. 1715-1729
    • Coleman, J.J.1
  • 265
    • 84892225697 scopus 로고    scopus 로고
    • Metalorganic chemical vapor deposition (MOCVD)
    • ed. by David A Glocker and S. Ismat Shah. Bristol: Institute of Physics
    • Dupuis, R.D., "Metalorganic chemical vapor deposition (MOCVD)" in Handbook of Thin Film Process Technology, ed. by David A Glocker and S. Ismat Shah. Bristol: Institute of Physics, 2002; 1: p. B.1.1:5-6.
    • (2002) Handbook of Thin Film Process Technology , vol.1
    • Dupuis, R.D.1
  • 266
    • 0000838780 scopus 로고
    • A critical appraisal of growth mechanisms in MOVPE
    • Stringfellow, G.B. "A critical appraisal of growth mechanisms in MOVPE." J. Cryst. Growth, 1984; 68: 111-22.
    • (1984) J. Cryst. Growth , vol.68 , pp. 111-122
    • Stringfellow, G.B.1
  • 267
    • 0001439555 scopus 로고
    • Thermodynamic aspects of OMVPE
    • Stringfellow, G.B. "Thermodynamic aspects of OMVPE." J. Cryst. Growth, 1984; 70: 133-9.
    • (1984) J. Cryst. Growth , vol.70 , pp. 133-139
    • Stringfellow, G.B.1
  • 268
    • 0004515086 scopus 로고    scopus 로고
    • Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy
    • Asai, Toshihiro and Dandy, David S., "Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy." J. Appl. Phys., 2000; 88: 4407-4416.
    • (2000) J. Appl. Phys. , vol.88 , pp. 4407-4416
    • Asai, T.1    Dandy, D.S.2
  • 269
    • 0018515263 scopus 로고
    • Simplified theory of reactive closed-spaced vapor transport
    • See, for example, Bailly, F.; Cohen-Solal, G.; and Mimila-Arroyo, J., "Simplified theory of reactive closed-spaced vapor transport." J. Electrochem. Soc., 1979; 126: 1604-1608.
    • (1979) J. Electrochem. Soc. , vol.126 , pp. 1604-1608
    • Bailly, F.1    Cohen-Solal, G.2    Mimila-Arroyo, J.3
  • 270
    • 0021056072 scopus 로고
    • Epitaxial growth of GaAs in chloride transport systems
    • See, for example, Heyen, M. and Balk, P., "Epitaxial growth of GaAs in chloride transport systems." Prog. in Cryst. Growth and Characterization, 1983; 6: 265-303.
    • (1983) Prog. in Cryst. Growth and Characterization , vol.6 , pp. 265-303
    • Heyen, M.1    Balk, P.2
  • 272
    • 0023980462 scopus 로고
    • Thermodynamic investigation of selective tungsten chemical vapour deposition: Influence of growth conditions and gas additives on the selectivity in the fluoride process
    • See, for example, Carlsson, Jan-Otto and Hårsta, Anders, "Thermodynamic investigation of selective tungsten chemical vapour deposition: Influence of growth conditions and gas additives on the selectivity in the fluoride process." Thin Solid Films, 1988; 158: 107-122.
    • (1988) Thin Solid Films , vol.158 , pp. 107-122
    • Carlsson, J.-O.1    Hårsta, A.2
  • 274
    • 18144436427 scopus 로고    scopus 로고
    • Growth of copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors
    • Torndahl, T.; Ottosson, M.; Carlsson, J.-O., "Growth of copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors." Thin Solid Films, 2004; 458: 129-136.
    • (2004) Thin Solid Films , vol.458 , pp. 129-136
    • Torndahl, T.1    Ottosson, M.2    Carlsson, J.-O.3
  • 275
    • 0024070333 scopus 로고
    • Growth kinetics of silicon carbide CVD
    • Kaneko, T. and Okuno, T., "Growth kinetics of silicon carbide CVD" J. Cryst. Growth: 91 (1988) 599-604.
    • (1988) J. Cryst. Growth , vol.91 , pp. 599-604
    • Kaneko, T.1    Okuno, T.2
  • 276
    • 0036070329 scopus 로고    scopus 로고
    • Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
    • Danielsson, Ö.; Henry, A.; and Janzén, E.; "Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers" J. Cryst. Growth: 243 (2002) 170-184.
    • (2002) J. Cryst. Growth , vol.243 , pp. 170-184
    • Danielsson, O.1    Henry, A.2    Janzén, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.