Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

Journal of Applied Physics

Volumn 99, Issue 4, 2006, Pages

  Liu, H Y ^a   Steer, M J ^a   Badcock, T J ^a   Mowbray, D J ^a   Skolnick, M S ^a   Suarez, F ^a,b   Ng, J S ^a   Hopkinson, M ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

INJECTION LASERS; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CAPPING LAYERS; ROOM TEMPERATURE (RT);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33644608491     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173188     Document Type: Article

References (22)

1. V. M. Ustinov and A. E. Zhukov, Semicond. Sci. Technol. 15, R41 (2000).
2. K. Nishi, H. Saito, S. Sugou, and J. Lee, Appl. Phys. Lett. 74, 1111 (1999).
3. H. Y. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.1776631 85, 704 (2004); H. Y. Liu, J. Appl. Phys. 0021-8979 10.1063/1.1773378 96, 1988 (2004); H. Y. Liu, IEEE Photonics Technol. Lett. 17, 1139 (2005).
4. H. Y. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.1776631 85, 704 (2004); H. Y. Liu, J. Appl. Phys. 0021-8979 10.1063/1.1773378 96, 1988 (2004); H. Y. Liu, IEEE Photonics Technol. Lett. 17, 1139 (2005).
5. H. Y. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.1776631 85, 704 (2004); H. Y. Liu, J. Appl. Phys. 0021-8979 10.1063/1.1773378 96, 1988 (2004); H. Y. Liu, IEEE Photonics Technol. Lett. 17, 1139 (2005).
6. I. R. Sellers, H. Y. Liu, M. Hopkinson, D. J. Mowbray, and M. S. Skolnick, Appl. Phys. Lett. 0003-6951 10.1063/1.1632533 83, 4710 (2003); H. Y. Liu, I. R. Sellers, M. Hopkinson, C. N. Harrison, D. J. Mowbray, and M. S. Skolnick, Appl. Phys. Lett. 0003-6951 10.1063/1.1622443 83, 3716 (2003); H. Y. Liu and M. Hopkinson, Appl. Phys. Lett. 82, 3644 (2003).
7. I. R. Sellers, H. Y. Liu, M. Hopkinson, D. J. Mowbray, and M. S. Skolnick, Appl. Phys. Lett. 0003-6951 10.1063/1.1632533 83, 4710 (2003); H. Y. Liu, I. R. Sellers, M. Hopkinson, C. N. Harrison, D. J. Mowbray, and M. S. Skolnick, Appl. Phys. Lett. 0003-6951 10.1063/1.1622443 83, 3716 (2003); H. Y. Liu and M. Hopkinson, Appl. Phys. Lett. 82, 3644 (2003).
8. I. R. Sellers, H. Y. Liu, M. Hopkinson, D. J. Mowbray, and M. S. Skolnick, Appl. Phys. Lett. 0003-6951 10.1063/1.1632533 83, 4710 (2003); H. Y. Liu, I. R. Sellers, M. Hopkinson, C. N. Harrison, D. J. Mowbray, and M. S. Skolnick, Appl. Phys. Lett. 0003-6951 10.1063/1.1622443 83, 3716 (2003); H. Y. Liu and M. Hopkinson, Appl. Phys. Lett. 82, 3644 (2003).
9. X. Huang, A. Stintz, C. P. Hains, G. T. Liu, J. Cheng, and K. J. Malloy, IEEE Photonics Technol. Lett. 12, 227 (2000).
10. H. Y. Liu, Appl. Phys. Lett. 86, 143108 (2005).
11. M. J. da Silva, A. A. Quivy, S. Martini, T. E. Lamas, E. C. F. da Silva, and J. R. Leite, Appl. Phys. Lett. 82, 2646 (2003).
12. M. Sopanen, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 76, 994 (2000).
13. T. Tatebayashi, M. Nishioka, and Y. Arakawa, Appl. Phys. Lett. 78, 3469 (2001).
14. V. M. Ustinov, A. Yu. Egorov, V. A. Odnoblyudov, N. V. Kryzhanovskaya, Y. G. Musikhin, A. F. Tsatsul 'nikov, and Z. I. Alferov, J. Cryst. Growth 251, 388 (2003).
15. N. N. Ledentsov, Electron. Lett. 39, 1126 (2003).
16. G. Balakrishnan, S. Huang, T. J. Rotter, A. Stintz, L. R. Dawson, K. J. Malloy, H. Xu, and D. L. Huffaker, Appl. Phys. Lett. 84, 2058 (2004).
17. M. Peter, K. Winkler, M. Maier, N. Herres, J. Wagner, D. Fekete, K. H. Bachem, and D. Richards, Appl. Phys. Lett. 67, 2639 (1995).
18. R. Heitz, Appl. Phys. Lett. 68, 361 (1996).
19. M. J. Steer, Phys. Rev. B 54, 17738 (1996).
20. M. Yamada, T. Anan, K. Tokutome, A. Kamei, K. Nishi, and S. Sugou, IEEE Photonics Technol. Lett. 12, 774 (2000).
21. O. Blum and J. F. Klem, IEEE Photonics Technol. Lett. 12, 771 (2000).
22. J. M. Ripalda, D. Granados, Y. González, A. M. Sánchez, S. I. Molina, and J. M. García, Appl. Phys. Lett. 87, 202108 (2005).