Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 12, 2002, Pages 1213071-1213074

  Krzyzewski, T J ^a   Joyce, P B ^a   Bell, G R ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM ARSENIDE; INDIUM;

ARTICLE; MATERIALS; MATERIALS TESTING; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY;

EID: 0037105103     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.121307     Document Type: Article

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