The role of segregation in InGaAs heteroepitaxy

Materials Science Forum

Volumn 539-543, Issue PART 4, 2007, Pages 3540-3545

  Litvinov, D ^a   Gerthsen, D ^a   Rosenauer, A ^b   Schowalter, M ^b   Passow, T ^a   Hetterich, M ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

Composition determination; InGaAs; Segregation; Transmission electron microscopy

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE SPECTROSCOPY; SEGREGATION (METALLOGRAPHY); TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITION DETERMINATION; PHOTOLUMINESCENCE PEAK POSITIONS;

INDIUM ALLOYS;

EID: 38349123624     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-428-6.3540     Document Type: Conference Paper

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