MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 35, Issue 1, 2006, Pages 194-198

  Jiao, Y H ^a   Wu, J ^a   Xu, B ^a   Jin, P ^a   Hu, L J ^a   Liang, L Y ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Long wavelength; Metamorphic; Molecular beam epitaxy; Quantum dots

Indexed keywords

INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC PROPERTIES;

LONG WAVELENGTHS; METAMORPHIC; METAMORPHIC BUFFER LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748929876     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.07.041     Document Type: Article

References (19)

1. Egorov A.Y., Zhukov A.E., Kop'ev P.S., Ledentsov N.N., Maksimov M.V., Ustinov V.M., Tsatsul'nikov A.F., Alferov Zh.I., Fedorov D.L., and Bimberg D. Semiconductors 30 (1996) 707
2. Tasco V., Todaro M.T., De Vittorio M., De Giorgi M., Cingolani R., Passaseo A., Ratajczak J., and Katcki J.W. Appl. Phys. Lett. 84 (2004) 4155
3. Volovik B.V., Sizov D.S., Tsatsul'nikov A.F., Musikhin Yu.G., Ledentsov N.N., Ustinov V.M., Egorov V.A., Petrov V.N., Ployakov N.K., and Tsyrlin G.E. Semiconductors 34 (2000) 1316
4. Passaseo A., Maruccio G., De Vittorio M., Rinaldi R., Cingolani R., and Lomascolo M. Appl. Phys. Lett. 78 (2001) 1382
5. Nishi K., Saito H., Sugou S., and Lee J.S. Appl. Phys. Lett. 74 (1999) 1111
6. Huffaker D.L., and Deppe D.G. Appl. Phys. Lett. 73 (1998) 520
7. Mirin R.P., Ibbetson J.P., Bowers J.E., and Gossard A.C. J. Cryst. Growth 175/176 (1997) 696
8. da Silva M.J., Quivy A.A., Martini S., Lamas T.E., da Silva E.C.F., and Leite J.R. Appl. Phys. Lett. 82 (2003) 2646
9. Volovik B.V., et al. Semiconductors 33 (1999) 901
10. Maximov M.V., et al. Phys. Rev. B 62 (2000) 16671
11. Kryzhanovskaya N.V., et al. Semiconductors 38 (2004) 833
12. Xin Y.C., Vaughn L.G., Dawson L.R., Stintz A., Lin Y., Lester L.F., and Huffaker D.L. J. Appl. Phys. 94 (2003) 2133
13. Ledentsov N.N., et al. Electron. Lett. 39 (2003) 1126
14. Gong Q., et al. J. Cryst. Growth 192 (1998) 376
15. Koo B.H., Hanada T., Makino H., and Yao T. Appl. Phys. Lett. 79 (2001) 4331
16. Krishnamoorthy V., Lin Y.W., and Park R.M. J. Appl. Phys. 72 (1992) 1752
17. Raghavan S., Rotella P., Stintz A., Malloy K.J., Krishna S., and Gray A.L. J. Cryst. Growth 247 (2003) 269
18. Shi G.X., Jin P., Xu B., Li C.M., Cui C.X., Wang Y.L., Ye X.L., Wu J., and Wang Z.G. J. Cryst. Growth 269 (2004) 181
19. Li G., Chua S.J., Xu S.J., Wang X.C., Helmy A.S., Ke M.-L., and Marsh J.H. Appl. Phys. Lett. 73 (1998) 3393