MBE growth of self-assembled InGaAs quantum dots aligned along quasi-periodic multi-atomic steps on a vicinal (1 1 1)B GaAs surface

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 697-700

  Akiyama, Y ^a   Sakaki, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Growth models; A1. Nanostructures; A1. Substrates; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

GROWTH MODELS; HYPOTHETICAL MODELS; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947313170     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.021     Document Type: Article

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