Low-strain InAsInGaAsGaAs quantum dots-in-a-well infrared photodetector

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1136-1139

  Shenoi, R V ^a   Attaluri, R S ^a   Siroya, A ^a   Shao, J ^a   Sharma, Y D ^a   Stintz, A ^a   Vandervelde, T E ^a   Krishna, S ^a  

^a University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CROSS SECTION; DEVICE PERFORMANCE; DOUBLE WELL STRUCTURE; QUANTUM DOTS-IN-A-WELL (DWELL) INFRARED PHOTODETECTORS;

GALLIUM COMPOUNDS; LATTICE MISMATCH; OPTIMIZATION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

PHOTODETECTORS;

EID: 44649110731     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2835063     Document Type: Article

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