GalnAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission

Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 3981-3983

  Harmand, J C ^a   Li, L H ^a   Patriarche, G ^a   Travers, L ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; DIFFUSION; ELECTRON DIFFRACTION; INTERFACIAL ENERGY; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACE ACTIVE AGENTS; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAPS; ELASTIC RELAXATION; ISOELECTRONIC SURFACTANTS; SURFACE UNDULATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2942523976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1751221     Document Type: Article

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