Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures

Nanotechnology

Volumn 19, Issue 44, 2008, Pages

  Mamutin, V V ^a   Egorov, A Yu ^a,b   Kryzhanovskaya, N V ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALS; GROWTH (MATERIALS); INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

EMISSION WAVELENGTHS; GROWTH METHODS; HETEROSTRUCTURES; INGAASN; INGAASN QUANTUM WELLS; PHOTOLUMINESCENCE EMISSIONS; QUANTUM DOTS; QUANTUM WELLS; RADIATIVE PROPERTIES; ROOM TEMPERATURES; WAVELENGTH CONTROLS; WAVELENGTH RANGES;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC DERIVATIVE; GALLIUM ARSENIDE; INDIUM; NITROGEN DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMICAL STRUCTURE; FIELD EMISSION; MOLECULAR MECHANICS; PHOTOLUMINESCENCE; PRIORITY JOURNAL; QUANTUM MECHANICS; ROOM TEMPERATURE; SPECTRAL SENSITIVITY;

EID: 58149250523     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/44/445715     Document Type: Article

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