Large InAs/GaAs quantum dots with an optical response in the long-wavelength region

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 103-107

  Da Silva, M J ^a   Quivy, A A ^a   Martini, S ^a   Lamas, T E ^a   Da Silva, E C F ^a   Leite, J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B2. Semiconducting indium compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; OPTOELECTRONIC DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

LONG-WAVELENGTH EMISSIONS; OPTICAL EMISSIONS; SEMICONDUCTING III-V MATERIALS; THRESHOLD CURRENT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 18444400284     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.118     Document Type: Conference Paper

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