Photoluminescence beyond 1.5 μm from InAs quantum dots

Microelectronics Journal

Volumn 37, Issue 12, 2006, Pages 1468-1470

  Ng, J S ^a   Liu, H Y ^a   Steer, M J ^a   Hopkinson, M ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Photoluminescence; Quantum dots; Type II

Indexed keywords

ANTIMONY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SILICON WAFERS;

GAASSB CAPPING LAYERS; OPTICAL EXCITATION POWER; PHOTOLUMINESCENCE PEAK ENERGIES; TYPE-II;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750702844     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.05.007     Document Type: Article

References (9)

1. da Silva M.J., Quivy A.A., Amrini S., Lamas T.E., da Silva E.C.F., and Leite J.R. InAs/GaAs quantum dots optically active at 1.5 μm. Appl. Phys. Lett. 82 16 (2003) 2846-2848
2. Sopanen M., Xin H.P., and Tu C.W. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs. Appl. Phys. Lett. 76 10 (2000) 994-996
3. Tatebayashi J., Nishioka M., and Arakawa Y. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor depostion. Appl. Phys. Lett. 78 22 (2001) 3469-3471
4. Balakrishanan G., Huang S., Rotter T.J., Stintz A., Dawson L.R., Malloy K.J., Xu H., and Huffaker D.L. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer. Appl. Phys. Lett. 84 12 (2004) 2058-2060
5. Liu H.Y., Steer M.J., Badcock T.J., Mowbray D.J., Skoonick M.S., Suarez F., Ng J.S., Hopkinson M., and David J.P.R. Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. J. Appl. Phys. 99 (2006) 046104
6. Teissier R., Sicault D., Harmand J.C., Ungaro G., Le Roux G., and Largeau L. Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs. J. Appl. Phys. 89 10 (2001) 5473-5477
7. Kroemer H., and Griffiths G. Staggered-lineup heterojunctions as sources of tunable below-gap radiation: operating principles and semiconductor selection. IEEE Electron. Dev. Lett. EDL-4 1 (1983) 20-22
8. Ledentsov N.N., Bohrer J., Beer M., Heinrichsdorff F., Grundmann M., Bimberg D., Ivanov S.V., Meltser B.Ya., Shaposhnikov S.V., Yassievich I.N., Faleev N.N., Kop'ev P.S., and Alferov Zh.I. Radiative states in type-II GaSb/GaAs quantum wells. Phys. Rev. B 52 19 (1995) 14058-14066
9. Chiu Y.S., H ya M., Su W.S., and Chen Y.F. Properties of photoluminescence in type-II GaAsSb/GaAs multiple quantum wells. J. Appl. Phys. 92 10 (2002) 5810-5813